K4RAH086VB-BIWM vs K4RHE086VP Comparison
Detailed side-by-side comparison of K4RAH086VB-BIWM by Samsung Electronics and K4RHE086VP by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH086VB-BIWM | K4RHE086VP |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DDR5 |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $9.90 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 24 Gb |
| Data Rate | 5600 Mbps per pin | — |
| Organization | [DATA_NEEDED: organization x4/x8] | x8 |
| Supply Voltage | [DATA_NEEDED: VDD voltage] | — |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | [DATA_NEEDED: bank group count] |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Process Node | — | 1a-class (D1a) |
| Interface Type | — | DDR5 (double data rate 5) |
| Maximum Data Rate | — | [DATA_NEEDED: speed bin data rate] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD in V] |
| On-Die ECC | — | Yes (DDR5 standard feature) |
| Operating Temperature Range | — | [DATA_NEEDED: temperature range] |
| Brand | — | Samsung Electronics |
| Product Family | — | Samsung K4RHE DDR5 series |
| Typical Application | — | Server / client DRAM modules |