K4RAH086VE-BCWM vs PDRQLAKCDF12-00 Comparison
Detailed side-by-side comparison of K4RAH086VE-BCWM by Samsung Electronics and PDRQLAKCDF12-00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ ActiveSamsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ ActiveSpecification Comparison
| Parameter | K4RAH086VE-BCWM | PDRQLAKCDF12-00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.60 | $13.60 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organization | 2G x 8 | 1G x 16 |
| Data Rate | 5600 Mbps | 7200 Mbps per pin |
| Supply Voltage (VDD) | 1.1 V | — |
| Package | 82-ball FBGA | 102-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Generation | DDR5 | DDR5 (improved from 6400 Mbps generation) |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency | [DATA_NEEDED: CL at 5600 Mbps] | [DATA_NEEDED: CAS latency] |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lifecycle Status | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| Speed Bin | — | DDR5-7200 |
| Operating Voltage | — | 1.1 V |
| Interface | — | JEDEC DDR5 |
| Package Height | — | [DATA_NEEDED: package height] |
| tCK / Cycle Time | — | [DATA_NEEDED: clock cycle time] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |