K4RAH086VE-BCWM vs PDRQLAKCDF12-00 对比
详细并排对比 K4RAH086VE-BCWM 出自 Samsung Electronics 和 PDRQLAKCDF12-00 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ 量产中Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ 量产中规格对比
| 参数 | K4RAH086VE-BCWM | PDRQLAKCDF12-00 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.60 | $13.60 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 存储组织 | 2G x 8 | 1G x 16 |
| 数据速率 | 5600 Mbps | 7200 Mbps per pin |
| Supply Voltage (VDD) | 1.1 V | — |
| 封装 | 82-ball FBGA | 102-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Generation | DDR5 | DDR5 (improved from 6400 Mbps generation) |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS 延迟 | [DATA_NEEDED: CL at 5600 Mbps] | [DATA_NEEDED: CAS latency] |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 生命周期状态 | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| Speed Bin | — | DDR5-7200 |
| Operating Voltage | — | 1.1 V |
| 接口 | — | JEDEC DDR5 |
| Package Height | — | [DATA_NEEDED: package height] |
| tCK / Cycle Time | — | [DATA_NEEDED: clock cycle time] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |