K4RAH165VB-BIQK vs K4RAH165VB-BCQK Comparison
Detailed side-by-side comparison of K4RAH165VB-BIQK by Samsung Electronics and K4RAH165VB-BCQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ ActiveSpecification Comparison
| Parameter | K4RAH165VB-BIQK | K4RAH165VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Organization | 1G x 16 | — |
| Data Rate | 4800 Mbps (MT/s) | 4800 Mbps |
| Supply Voltage (VDD) | 1.1 V | 1.1 V |
| On-Die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| DLL Enabled Mode | Yes (spec mode per datasheet) | — |
| Package | [DATA_NEEDED: exact package ball count / FBGA designation] | 106-ball FBGA |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Brand | Samsung Semiconductor | — |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Error Correction | — | On-die ECC |
| Features | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Mounting Type | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Packaging | — | Tray |
| Lifecycle Status | — | Active |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |
| Unit Price | — | [DATA_NEEDED: unit price] |