K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung
MPN: K4RAH165VB-BIQK ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K4RAH165VB-BIQK — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RAH165VB-BCQK
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →K4RAH165VB-BCWM
✅ Drop-In✓ In Stock
$9.92 / Unit
View Datasheet →K4RAH086VB-BIQK
✅ Drop-In✓ In Stock
$4.25 / Unit
View Datasheet →K4RAH086VB-BCQK
✅ Drop-In✓ In Stock
$6.75 / Unit
View Datasheet →K4RAH086VB-BCWM
✅ Drop-In✓ In Stock
$4.6 / Unit
View Datasheet →K4RAH165VB-BIQK Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Density | 16 Gb |
| Organization | 1G x 16 |
| Data Rate | 4800 Mbps (MT/s) |
| Supply Voltage (VDD) | 1.1 V |
| On-Die ECC | Yes |
| Auto Self-Refresh | Yes |
| Asynchronous Reset | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| DLL Enabled Mode | Yes (spec mode per datasheet) |
| Brand | Samsung Semiconductor |
K4RAH165VB-BIQK [data_needed: exact package ball count / fbga designation] Pin Configuration Guide
Complete pinout information for K4RAH165VB-BIQK ([data_needed: exact package ball count / fbga designation] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: exact package ball count / fbga designation] package pinout diagram for K4RAH165VB-BIQK](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K4RAH165VB-BIQK.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RAH165VB-BIQK is suitable for 6 applications: DDR5 Memory Modules (SODIMM/UDIMM), Client PC and Notebook Memory-Down, Industrial Computing and Edge Servers, High-Performance Computing Systems, Consumer Electronics and Set-Top Platforms, Networking and Communication Equipment.
DDR5 Memory Modules (SODIMM/UDIMM)
The K4RAH165VB-BIQK is a primary building block for next-generation DDR5 memory modules. Its 16 Gb density and 1G x16 organization match the standard IC population of DDR5 SODIMMs used in notebooks and small-form-factor PCs, while the 4800 Mbps data rate delivers the bandwidth headroom DDR5 platforms expect. On-die ECC improves module-level reliability without host overhead, and the 1.1 V operation supports the module PMIC power budget. Mounted on module PCBs, the device relies on the module's address/command bus termination and ZQ calibration for signal integrity at speed. Distributor data confirms K4RAH165VB devices are found on shipping notebook memory modules.
Recommended
Client PC and Notebook Memory-Down
In motherboard memory-down designs, the K4RAH165VB-BIQK replaces SO-DIMM sockets with on-board DRAM, saving height and improving signal integrity. Its 16 Gb per-device density allows 8 GB to 16 GB system memory from a handful of components, and the BI industrial grade gives margin over commercial bins for thermally constrained notebook enclosures. The 4800 Mbps rate matches the JEDEC DDR5-4800 memory controller capability of current client SoCs, while 1.1 V VDD reduces platform power. Designers should follow Samsung's routing guidance for length-matched address/command and DQ fly-by topologies documented in the DDR5 device operation datasheet.
Recommended
Industrial Computing and Edge Servers
Industrial PCs, edge servers, and factory automation controllers benefit from the BI (industrial) grade of the K4RAH165VB-BIQK, which offers qualification margin beyond commercial bins. DDR5's on-die ECC addresses soft-error reliability in electrically noisy factory environments, and the asynchronous reset feature enables deterministic recovery after brownout events. The 16 Gb density supports memory-hungry workloads such as machine-vision buffering and protocol processing, while 1.1 V operation eases thermal design in sealed fanless enclosures. DDR5's roughly 30% power-efficiency gain over DDR4 further reduces cooling requirements in conduction-cooled industrial systems.
Recommended
High-Performance Computing Systems
The K4RAH165VB-BIQK serves high-performance computing systems where bandwidth and efficiency are critical, as noted in verified distributor documentation. At DDR5-4800, each x16 device contributes substantial per-pin bandwidth, and multi-channel memory controllers aggregate this into platform-level throughput for compute nodes. Samsung's DDR5 portfolio extends to 7200 Mbps and 32 Gb densities, giving designers an upgrade path on the same platform architecture. On-die ECC maintains data integrity under sustained full-bandwidth loads typical of scientific and AI workloads, and ZQ calibration plus write leveling keep DQ lines calibrated across dense multi-rank board layouts.
Recommended
Consumer Electronics and Set-Top Platforms
Smart TVs, set-top boxes, and gaming peripherals moving to DDR5-class SoCs use 16 Gb x16 DDR5 devices like the K4RAH165VB-BIQK for main system memory. The 4800 Mbps rate supports 4K and 8K video frame buffering, and the 1G x16 organization aligns with the wide low-pin-count buses common in consumer SoCs. On-die ECC reduces display glitches from random bit errors, important in always-on video applications. The commercial-grade BCQK/BCWM variants of the same die allow cost optimization in consumer builds, while the BI grade of this part suits premium or thermally aggressive consumer products such as consoles.
Recommended
Networking and Communication Equipment
Routers, switches, and 5G small-cell equipment require high-bandwidth packet buffering and control-plane memory, an area where the K4RAH165VB-BIQK fits well. Its 4800 Mbps data rate supports the sustained streaming workloads of packet buffers, while on-die ECC protects against uncorrected bit errors in telecom environments that demand carrier-grade uptime. The asynchronous reset input allows the system to recover the DRAM quickly after watchdog-triggered resets without full power cycling. The BI industrial temperature grade supports outdoor and unventilated telecom enclosures, and the 1.1 V rail integrates cleanly with modern low-voltage networking power trees.
Recommended
Recommended Products Summary
Engineering reference data for K4RAH165VB-BIQK — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RAH165VB-BCQK | K4RAH165VB-BCWM | K4RAH086VB-BIQK |
|---|---|---|---|---|
| Package | [DATA_NEEDED: exact package ball count / FBGA designation] | Same family BGA package - same | Same family BGA package - same | Same family BGA package (x8 ballout) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 2G x 8 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Data Rate | 4800 Mbps | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Grade Suffix | BI (industrial class) | BC (commercial) | BC (commercial) | BI (industrial class) |
Key Differentiators
- Industrial (BI) grade for extended qualification margin (vs K4RAH165VB-BCQK)
- DDR5 generation efficiency and bandwidth (vs K4A8G085WB)
- x16 bus width simplifies wide low-component-count buses (vs K4RAH086VB-BIQK)
Design Notes
DDR5-4800 operation leaves tight timing margins on address/command and DQ nets. Follow Samsung's device operation datasheet routing guidance: fly-by address/command topology with per-DIMM or per-device termination, length-matched DQ/DM/DQS within package skew allowances, and reference voltage (VDDQ) tracking. Enable write leveling and ZQ calibration during controller initialization; both are supported features of the K4RAH165VB family. Simulate eye diagrams at 4800 MT/s with the actual stackup before committing the PCB.
The K4RAH165VB-BIQK operates from a 1.1 V supply family typical of DDR5. DDR5 platforms require a dedicated PMIC (on modules per JEDEC, or on-board in memory-down designs) to supply and sequence VDD/VDDQ rails. Verify peak refresh current during all-bank auto-refresh bursts when sizing the power tree, and account for self-refresh current in low-power states. The 1.1 V generation improves efficiency roughly 30% over DDR4, but multi-rank designs still need solid plane allocation and bulk decoupling near each device.
Do not confuse family suffixes: K4RAH165VB (x16) and K4RAH086VB (x8) parts have different ballouts and are not interchangeable on the same footprint. Likewise, BI vs BC grade suffixes indicate different speed/temperature bins - verify the bin against your memory controller's supported timing table before substitution. Also note the UTTC-hosted K4RAH165VB datasheet is an abstract covering DLL-enabled mode only; common operational features are documented in Samsung's separate Device Operation datasheet, which should be read together with it.
Compliance Information
Compliance data not present in verified web data; consult Samsung Semiconductor's official product page and environmental reports for RoHS/REACH status.
