K4RBH165VB-BCQK vs K4RAH165VB-BCQK Comparison

Detailed side-by-side comparison of K4RBH165VB-BCQK by Samsung Electronics and K4RAH165VB-BCQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ Active
Samsung Electronics
K4RAH165VB-BCQK K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK ✓ Active

Specification Comparison

Parameter K4RBH165VB-BCQK K4RAH165VB-BCQK
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Memory Type DDR5 SDRAM DDR5 SDRAM
Memory Size 16 Gb 16 Gb
Organization 1G x 16 —
Data Rate 4800 Mbps/pin 4800 Mbps
Speed Grade BCQK (4800 Mbps) —
Operating Temperature 0 C to +85 C 0C to +85C
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Error Correction On-chip (on-die) ECC On-die ECC
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
Supply Voltage [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] —
Package Type [DATA_NEEDED: exact package code, expected FBGA surface mount] —
Mounting Type Surface Mount Surface Mount
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Burst Length [DATA_NEEDED: burst length (BL16 per DDR5 standard)] —
Memory Organization — 1G x 16
Memory Interface — Parallel
Supply Voltage (VDD) — 1.1 V
Features — Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration
Package — 106-ball FBGA
Memory Format — DRAM (volatile)
Packaging — Tray
Lifecycle Status — Active
Unit Price — [DATA_NEEDED: unit price]

Datasheets & Resources

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