K6F2016U4D-FF70T00 vs K6F3216U6M-EF70T Comparison
Detailed side-by-side comparison of K6F2016U4D-FF70T00 by Samsung Electronics and K6F3216U6M-EF70T by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ Active
Specification Comparison
| Parameter | K6F2016U4D-FF70T00 | K6F3216U6M-EF70T |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $6.10 |
| Memory Type | Asynchronous SRAM | SRAM - Asynchronous |
| Memory Size | 2 Mbit | 32 Mbit |
| Organization | 128K x 16 | 2M x 16 |
| Access Time (tAA) | 70 ns | — |
| Supply Voltage (Vcc) | 2.7 V to 3.3 V | — |
| Interface | Parallel | Parallel |
| Technology | Full CMOS | Full CMOS Static RAM |
| Write Cycle Time (tWP) | 50 ns | — |
| Operating Temperature | Industrial temperature range | [DATA_NEEDED: Operating Temperature Range] |
| Package | 48-FBGA (6x7 mm) chip-scale package | 55-TFBGA (7.5 x 12 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grades in Family | 55 ns, 70 ns | — |
| Power Feature | Super low power and low voltage | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | NO (per third-party listing) |
| Supply Voltage | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |
| Refresh Requirement | — | None (static memory) |