K6F3216U6M-EF70T - 32Mbit Async SRAM 2Mx16 | Samsung
MPN: K6F3216U6M-EF70T ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.6 | $3,300.00 |
| 1,000 | $6.1 | $6,100.00 |
Drop-in alternatives for K6F3216U6M-EF70T — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K6F2016U4D-FF70T00
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$2.05 / Unit
View Datasheet →K6F2016U4E-EF70T
✅ Drop-In✓ In Stock
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View Datasheet →K6F1616U6A-EF55T
✅ Drop-In✓ In Stock
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View Datasheet →K6X0808C1D-BF70T
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →K6X1008C2D-TF55
✅ Drop-In✓ In Stock
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View Datasheet →K6F3216U6M-EF70T Maximum Ratings & Electrical Characteristics
| Memory Type | SRAM - Asynchronous |
| Memory Size | 32 Mbit |
| Organization | 2M x 16 |
| Supply Voltage | 3 V |
| Access Time | 55 ns |
| Interface | Parallel |
| Technology | Full CMOS Static RAM |
| Package | 55-TFBGA (7.5 x 12 mm) |
| Mounting Type | Surface Mount |
| Speed Grade | -EF70 (55 ns) |
| Standard Pack Qty | 2400 |
| RoHS Status | NO (per third-party listing) |
| Memory Composition | Volatile SRAM |
| Refresh Requirement | None (static memory) |
K6F3216U6M-EF70T 55-tfbga (7.5 x 12 mm) Pin Configuration Guide
Complete pinout information for K6F3216U6M-EF70T (55-tfbga (7.5 x 12 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K6F3216U6M-EF70T.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K6F3216U6M-EF70T is suitable for 6 applications: Industrial Controllers, Embedded Data Logging, Firmware Boot and Data Storage Modules, Battery-Backed Portable Systems, Computing Modules and SOMs, Legacy Replacement Sourcing.
Industrial Controllers
The K6F3216U6M-EF70T fits industrial controller designs that need deterministic, clock-free scratch memory. Its 55 ns asynchronous access means the MCU or FPGA bus can service the SRAM without a memory controller clock domain, simplifying timing closure in legacy PLC and motor-control boards. The 3V full-CMOS process keeps static current draw very low, which matters in control cabinets where standby power budgets are audited. With 2M x16 organization, a single device covers 16-bit data-path buffering for logging queues, look-up tables, and parameter storage. Designers should budget bus wait states for the 55 ns access time and verify the 55-TFBGA footprint against reflow process capability.
Recommended
Embedded Data Logging
In embedded logging systems, the K6F3216U6M-EF70T serves as a high-speed circular buffer between sensor acquisition and slower non-volatile storage. The 32Mbit (4 MB) capacity holds substantial log windows at 16-bit sample width, while the 55 ns access time sustains continuous write streaming without flow control. Because it is a static RAM, no refresh overhead or latency jitter is introduced, so timestamp fidelity is preserved. The super-low-power CMOS process allows logging to continue during system sleep states powered from a backup rail. Engineers should implement power-fail detection so in-flight writes complete before the 3V rail collapses.
Recommended
Firmware Boot and Data Storage Modules
The K6F3216U6M-EF70T is listed by Samsung for firmware boot and data storage roles in computing modules. In boot applications it can stage decompressed firmware images or serve as execution RAM before main DRAM is initialized, with the 2M x16 organization matching 16-bit and 32-bit boot buses. The asynchronous parallel interface removes clock-domain dependencies during early power-up, when clock trees are not yet stable. Its 55 ns timing is adequate for boot ROM shadowing at moderate bus speeds. Layout should prioritize short, length-matched address/data traces within the 55-TFBGA footprint region to protect the 55 ns access budget.
Recommended
Battery-Backed Portable Systems
Samsung characterizes the K6F3216U6M family as super-low-power and low-voltage, making the -EF70T attractive for portable and battery-backed equipment where retained SRAM state must survive long idle periods. The 3V rail matches lithium primary cells and single-cell Li-ion via an LDO, and full-CMOS cells draw negligible static current in standby. The 4 MB capacity supports handheld instrument data caches, configuration stores, and session state retention. Designers should add a supervisor IC to switch the SRAM to battery power on main-rail failure and to hold chip-enable inactive during transitions to prevent corrupt writes.
Recommended
Computing Modules and SOMs
System-on-module designs use the K6F3216U6M-EF70T as reliable, low-latency buffer memory for firmware, FPGA configuration images, and CPU scratch data. The compact 7.5 x 12 mm 55-TFBGA package conserves module area, and the parallel asynchronous bus interfaces directly to FPGA I/O banks without a memory controller. The 32Mbit density strikes a balance between footprint and capacity for module-level boot staging. Because the part is mature, module vendors should lock second-source or last-time-buy strategies; qualifying a same-family Samsung alternative preserves the BGA footprint and minimizes requalification effort.
Recommended
Legacy Replacement Sourcing
A significant use case for the K6F3216U6M-EF70T is replacement sourcing: maintaining and repairing legacy industrial, telecom, and test equipment that specified Samsung super-low-power SRAM. Purchasing the exact -EF70T MPN preserves the original 55 ns timing budget and 55-TFBGA footprint with zero redesign, which is critical when original schematics and firmware are no longer maintained. Distributors such as DigiKey and Ampheo list stock as of 2026-09-01. Buyers should confirm date codes, verify RoHS status documentation (third-party listings report NO for this suffix), and purchase from authorized or reputable channels to avoid counterfeit risk.
Recommended
Recommended Products Summary
Engineering reference data for K6F3216U6M-EF70T — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K6F2016U4D-FF70T00 | K6F2016U4E-EF70T | K6F1616U6A-EF55T | K6X0808C1D-BF70T | K6X1008C2D-TF55 |
|---|---|---|---|---|---|---|
| Package | 55-TFBGA (7.5 x 12 mm) | [DATA_NEEDED: package verification] | [DATA_NEEDED: package verification] | [DATA_NEEDED: package verification] | [DATA_NEEDED: package verification] | [DATA_NEEDED: package verification] |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 32 Mbit | [DATA_NEEDED: Memory Size] | [DATA_NEEDED: Memory Size] | 16 Mbit | [DATA_NEEDED: Memory Size] | [DATA_NEEDED: Memory Size] |
| Organization | 2M x 16 | [DATA_NEEDED: Organization] | [DATA_NEEDED: Organization] | 1M x 16 | [DATA_NEEDED: Organization] | [DATA_NEEDED: Organization] |
| Access Time | 55 ns | 70 ns (FF70 grade) | 70 ns (EF70 grade) | 55 ns | 70 ns | 55 ns |
| Supply Voltage | 3 V | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: Supply Voltage] |
| Interface | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous |
| Drop-in Compatibility | Reference part | Requires ball-map verification; different capacity | Requires ball-map verification; different capacity | Not drop-in - half capacity | Requires verification - different family | Requires verification - different family |
Key Differentiators
- 32Mbit density in compact 55-TFBGA (vs K6F1616U6A-EF55T)
- Faster 55 ns access grade (vs K6F2016U4D-FF70T00)
- Super-low-power full CMOS process (vs K6X0808C1D-BF70T)
Design Notes
The 55-TFBGA (7.5 x 12 mm) package requires a fine-pitch BGA footprint with via-in-pad or dogbone fanout. Follow the Samsung K6F3216U6M datasheet land pattern recommendations exactly; do not scale the footprint. Route address and data buses with matched lengths where possible and keep series termination close to the driving device to control reflections on the 55 ns access budget. Provide a solid VDD plane and at least one 0.1 uF decoupling capacitor per power ball group, placed within 2-3 mm of the package.
The device operates from a nominal 3V supply. Confirm exact VDD min/max range in the Samsung K6F3216U6M datasheet before finalizing the power tree, as this parameter was not present in the retrieved web data. For battery-backed designs, add a supervisor that deselects the chip (CE high) before and during power transitions to prevent data corruption, and size the backup source for the standby current listed in the datasheet - the full-CMOS process implies very low standby draw, but the exact figure must come from the manufacturer document.
This is a slow-speed (55 ns) asynchronous SRAM: budget bus wait states in your memory controller accordingly, and never assume zero-wait-state access. Also verify compliance expectations early - third-party listings report RoHS status NO for this suffix, which blocks use in RoHS-restricted new products. Finally, since this is a mature part with no verified drop-in cross-brand substitute, secure last-time-buy quantities or qualify a same-family alternative before end-of-life announcements.
Compliance Information
Third-party listing (penghe-ic.com) reports RoHS status: NO for K6F3216U6M-EF70T. Verify current compliance documentation with Samsung Semiconductor before use in RoHS-restricted products.
