K6X0808C1D-BF55 vs K6X0808C1D-GF55000 Comparison
Detailed side-by-side comparison of K6X0808C1D-BF55 by Samsung Electronics and K6X0808C1D-GF55000 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ ActiveSamsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-BF55 | K6X0808C1D-GF55000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $3.20 |
| Memory Type | Asynchronous SRAM | SRAM - Asynchronous |
| Memory Size | 256 Kbit | 256 Kbit |
| Organization | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel |
| Supply Voltage | 5 V | 5 V |
| Technology | CMOS | Low-power CMOS |
| Package | 28-SOP | 28-SOP |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | [DATA_NEEDED: operating current] |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| Memory Format | SRAM | Volatile, no refresh required |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| Output Type | — | Three-state, common data I/O |