K6X0808C1D-BF55 vs K6X0808C1D-GF55T Comparison
Detailed side-by-side comparison of K6X0808C1D-BF55 by Samsung Electronics and K6X0808C1D-GF55T by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ ActiveSamsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-BF55 | K6X0808C1D-GF55T |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Category | DRAM | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $1.85 |
| Memory Type | Asynchronous SRAM | SRAM - Asynchronous |
| Memory Size | 256 Kbit | 256 Kbit |
| Organization | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel |
| Supply Voltage | 5 V | 5.0 V |
| Technology | CMOS | — |
| Package | 28-SOP | 28-SOP (450 mil) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Memory Format | SRAM | — |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Process Technology | — | Full CMOS |
| Active Current | — | [DATA_NEEDED: active current] |
| Data Retention Voltage | — | Low data retention voltage supported (per datasheet) |
| Address Bus Width | — | 15 bit |
| Data Bus Width | — | 8 bit |
| Packaging | — | Tape & Reel (T suffix) |