K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
MPN: K6X0808C1D-GF55T ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.66 | $26.60 |
| 100 | $2.36 | $236.00 |
| 500 | $2.07 | $1,035.00 |
| 1,000 | $1.85 | $1,850.00 |
Drop-in alternatives for K6X0808C1D-GF55T — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K6X0808C1D-GF55T00
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →K6X0808C1D-GF55000
✅ Drop-In✓ In Stock
$3.2 / Unit
View Datasheet →K6X0808C1D-GF70T00
✅ Drop-In✓ In Stock
$1.85 / Unit
View Datasheet →K6X0808C1D-GF70000
✅ Drop-In✓ In Stock
$1.1 / Unit
View Datasheet →K6X0808C1D-BF55
✅ Drop-In✓ In Stock
$1.85 / Unit
View Datasheet →K6X0808C1D-BF70T
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →K6X0808C1D-GF55T Maximum Ratings & Electrical Characteristics
| Memory Type | SRAM - Asynchronous |
| Memory Size | 256 Kbit |
| Organization | 32K x 8 |
| Access Time | 55 ns |
| Supply Voltage | 5.0 V |
| Interface | Parallel |
| Process Technology | Full CMOS |
| Mounting Type | Surface Mount |
| Package | 28-SOP (450 mil) |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) |
| Control Signals | CE, OE, WE |
| Address Bus Width | 15 bit |
| Data Bus Width | 8 bit |
| Packaging | Tape & Reel (T suffix) |
K6X0808C1D-GF55T Pin Configuration
| Pin 1 | NC — Not connected (per datasheet) |
| Pin 2 | A0 — Address input |
| Pin 3 | A1 — Address input |
| Pin 4 | A2 — Address input |
| Pin 5 | A3 — Address input |
| Pin 6 | A4 — Address input |
| Pin 7 | A5 — Address input |
| Pin 8 | A6 — Address input |
| Pin 9 | A7 — Address input |
| Pin 10 | A8 — Address input |
| Pin 11 | A9 — Address input |
| Pin 12 | A10 — Address input |
| Pin 13 | A11 — Address input |
| Pin 14 | GND — Ground |
| Pin 15 | A12 — Address input |
| Pin 16 | A13 — Address input |
| Pin 17 | A14 — Address input |
| Pin 18 | CE — Chip enable |
| Pin 19 | DQ0 — Data input/output bit 0 |
| Pin 20 | DQ1 — Data input/output bit 1 |
| Pin 21 | DQ2 — Data input/output bit 2 |
| Pin 22 | DQ3 — Data input/output bit 3 |
| Pin 23 | WE — Write enable |
| Pin 24 | DQ4 — Data input/output bit 4 |
| Pin 25 | DQ5 — Data input/output bit 5 |
| Pin 26 | DQ6 — Data input/output bit 6 |
| Pin 27 | OE — Output enable |
| Pin 28 | DQ7 — Data input/output bit 7 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K6X0808C1D-GF55T is suitable for 6 applications: Legacy Industrial Controllers, Telecom Line Cards and Network Equipment, Battery-Backed Data Logging, Test and Measurement Instrumentation, Embedded CPU External Memory Expansion, Automotive and Marine Legacy Diagnostics Modules.
Legacy Industrial Controllers
Many industrial PLCs, motor controllers and I/O modules designed around 5 V microprocessors use external asynchronous SRAM for scratchpad and data tables. The K6X0808C1D-GF55T matches this environment directly: its single 5.0 V supply and TTL-compatible parallel interface connect to 8051-class or 80C186-class buses without level shifting or glue logic, while the 55 ns access time supports zero-wait-state cycles on slower legacy CPUs with generous margin. Its full-CMOS process keeps standby current low for control cabinets that remain powered continuously, and the low data retention voltage enables battery-backed retention of configuration and process parameters during power outages. The 28-SOP (450 mil) surface-mount package withstands industrial vibration better than DIP alternatives, and same-family speed and temperature grades allow supply-chain substitution without redesign.
Recommended
Telecom Line Cards and Network Equipment
Telecom line cards, T1/E1 framers and legacy network equipment frequently used 32K x 8 asynchronous SRAMs for per-channel buffers, lookup tables and statistics counters. The K6X0808C1D-GF55T fits this role with its deterministic 55 ns read/write timing - unlike DRAM, no refresh pauses interrupt service routines - and its simple CE/OE/WE control maps cleanly onto FPGA or ASIC-generated bus cycles. The 5 V CMOS interface matches the classic 5 V backplane logic common in telecom hardware. Standby power stays in the microamp range between accesses, reducing line-card thermal budget. For designs that migrated to 3.3 V, this part is only appropriate where 5 V-tolerant interfaces exist; otherwise, newer SRAM families should be evaluated. The low data retention voltage also supports redundant-store schemes in central-office equipment where configuration must survive short power interruptions.
Recommended
Battery-Backed Data Logging
Data loggers for energy meters, environmental sensors and industrial process recording benefit from the K6X0808C1D-GF55T's low data retention voltage: when main power fails, a small lithium backup cell can hold the 256 Kbit contents for years because CMOS static cells require almost no current to retain state. The logger's MCU writes timestamped records into the 32K x 8 array through the standard parallel bus; the dedicated WE and CE lines make write protection during power-transients straightforward by gating CE with the supervisor signal. The 55 ns access time is more than adequate for the low logging rates typical of these systems, and the 5 V supply aligns with the microcontroller rails common in field instruments. Compared with serial EEPROM solutions, this SRAM offers effectively unlimited endurance and nanosecond-scale writes for high-frequency logging.
Recommended
Test and Measurement Instrumentation
Bench instruments such as logic analyzers, function generators and protocol testers of the 5 V era used fast asynchronous SRAM as capture buffers and waveform memory. The K6X0808C1D-GF55T provides a 55 ns access time that supports moderate-speed capture loops, and its asynchronous nature means sample clocking is entirely under the designer's control with no refresh-induced gaps in acquired data. The 32K x 8 organization gives 32,768 8-bit samples per capture pass, sufficient for many trigger-and-display workflows. Full-CMOS construction minimizes internal heating, protecting measurement accuracy in enclosed instruments. For instrument servicing and reverse-logistics repair, this family's multiple packaging and speed grades let repair shops substitute available variants (55 ns or 70 ns) without PCB changes - an important advantage for keeping legacy test equipment in service where original parts are constrained.
Recommended
Embedded CPU External Memory Expansion
Microcontrollers with external bus interfaces - 8051 derivatives, Z180, H8 and similar 5 V embedded CPUs - commonly expand RAM using a single 32K x 8 SRAM. The K6X0808C1D-GF55T connects directly: 15 address lines from the CPU's address bus, 8 data lines to the multiplexed or demultiplexed data bus, and RD/WR strobes driving OE and WE, with CE derived from address decoding. At 55 ns access, the part supports zero-wait-state operation for most classic CPU clock rates, giving headroom for overclocked or margin-sensitive designs. Because the family is fabricated in full-CMOS, total system standby draw remains acceptable in always-on products. This part is a direct service replacement for failed SRAM in such products, and the same-package GF70 grade permits cost-optimized builds where one wait state is tolerable.
Recommended
Automotive and Marine Legacy Diagnostics Modules
Older engine management and diagnostic modules - including scan tools and 5 V ECUs - stored fault-code buffers and freeze-frame data in parallel SRAM. The K6X0808C1D-GF55T suits service and remanufacturing of such modules: its 5 V supply matches the original board rails, the 28-SOP (450 mil) footprint matches legacy layouts, and battery-backup retention via the low data retention voltage preserves trouble codes across key-off periods. For remanufacturers, availability across multiple Samsung grades (55 ns commercial, 70 ns, and BF extended-temperature variants) provides stocking flexibility when exact-speed parts are scarce, with no PCB change required. The full-CMOS process tolerates the underhood standby profiles of this equipment class when paired with proper voltage regulation. Verify the exact grade temperature rating against the module's validated environment before substitution in safety-related positions.
Recommended
Recommended Products Summary
Engineering reference data for K6X0808C1D-GF55T — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K6X0808C1D-GF55T00 | K6X0808C1D-GF70T00 | K6X0808C1D-BF55 | K6X0808C1D-BF70T |
|---|---|---|---|---|---|
| Package | 28-SOP (450 mil) | 28-SOP (450 mil) - same | 28-SOP (450 mil) - same | 28-SOP (450 mil) - same | 28-SOP (450 mil) - same |
| Brand | Samsung | Samsung | Samsung | Samsung | Samsung |
| Memory Organization | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) |
| Access Time | 55 ns | 55 ns | 70 ns | 55 ns | 70 ns |
| Supply Voltage | 5.0 V | 5.0 V | 5.0 V | 5.0 V | 5.0 V |
| Temperature Range Grade | GF (standard) | GF (standard) | GF (standard) | BF (extended) | BF (extended) |
| Packaging | Tape & Reel (T) | Tape & Reel (T, -00 code) | Tape & Reel (T, -00 code) | [DATA_NEEDED] | Tape & Reel (T) |
| Process Technology | Full CMOS | Full CMOS | Full CMOS | Full CMOS | Full CMOS |
Key Differentiators
- Fastest standard speed grade in the K6X0808C1D family (vs K6X0808C1D-GF70T00)
- Standard temperature range for cost-optimized builds (vs K6X0808C1D-BF70T)
- Battery-backup friendly via low data retention voltage (vs Generic parallel SRAM equivalents)
Design Notes
Use the 28-SOP-450mil land pattern exactly as specified in the Samsung K6X0808C1D datasheet; the same family is also offered in 28-DIP-600mil, and the two footprints are NOT interchangeable. When substituting same-family variants (GF55/GF70/BF grades), verify the package outline drawing for the -T tape-and-reel suffix, as molding tolerances can vary slightly between generations. Place a 0.1 uF ceramic decoupling capacitor within 5 mm of the VCC pin, and keep address lines short and roughly length-matched to minimize skew in fast bus designs.
The device operates from a single 5.0 V rail. Estimated: with CMOS SRAM, active current is drawn primarily during access transitions, and standby current falls to microamp levels when CE is deselected - consult the datasheet ICC/ISB tables for exact values. For battery-backup designs, gate CE low during power-down with a supervisor IC so no spurious write occurs as VCC decays, and confirm the low data retention voltage threshold from the datasheet before sizing the backup cell for your required retention years.
Do not connect this 5 V SRAM directly to a 3.3 V microcontroller data bus without level shifting or confirmation of 5 V tolerance on the MCU pins - this is the most common failure mode when retrofitting legacy SRAM into modern designs. Also verify timing substitution rules: a GF70 (70 ns) part may not meet a timing budget written for 55 ns at zero wait states. Finally, tie unused address inputs only within the decoded space; never leave CE floating, or bus contention can corrupt stored data.
Compliance Information
Compliance data was not present in the retrieved web data for this legacy part. Verify RoHS/REACH status with Samsung Semiconductor or your distributor before specifying in new EU-market designs.
