K6X0808C1D-GF55T vs K6X0808C1D-BF55 Comparison
Detailed side-by-side comparison of K6X0808C1D-GF55T by Samsung Electro-Mechanics and K6X0808C1D-BF55 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ ActiveSamsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-GF55T | K6X0808C1D-BF55 |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Category | DRAM | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $1.85 |
| Memory Type | SRAM - Asynchronous | Asynchronous SRAM |
| Memory Size | 256 Kbit | 256 Kbit |
| Organization | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 5.0 V | 5 V |
| Interface | Parallel | Parallel |
| Process Technology | Full CMOS | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package | 28-SOP (450 mil) | 28-SOP |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Bus Width | 15 bit | — |
| Data Bus Width | 8 bit | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | unknown |
| Packaging | Tape & Reel (T suffix) | — |
| Technology | — | CMOS |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Memory Format | — | SRAM |
| Clock Frequency | — | N/A (asynchronous) |
| Refresh | — | Not required (static memory) |