K6X0808C1D-GF70000 vs K6X0808C1D-BF55 Comparison

Detailed side-by-side comparison of K6X0808C1D-GF70000 by Samsung Electronics and K6X0808C1D-BF55 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K6X0808C1D-GF70000 K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP

K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP

K6X0808C1D-GF70000 ✓ Active
Samsung Electronics
K6X0808C1D-BF55 K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung

K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung

K6X0808C1D-BF55 ✓ Active

Specification Comparison

Parameter K6X0808C1D-GF70000 K6X0808C1D-BF55
Brand Samsung Electronics Samsung Electronics
Category DRAM DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.10 $1.85
Memory Type SRAM - Asynchronous Asynchronous SRAM
Memory Size 256 Kbit 256 Kbit
Organization 32K x 8 bit 32K x 8
Interface Parallel Parallel
Access Time 70 ns 55 ns
Supply Voltage - Min 4.5 V —
Supply Voltage - Max 5.5 V —
Technology Low Power CMOS CMOS
Address Bus Width 15 bit (A0-A14) —
Data Bus Width 8 bit (tri-state I/O) —
Control Signals CE, OE, WE CE, OE, WE
Input/Output Levels TTL compatible —
Package 28-SOP 28-SOP
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Standby Current [DATA_NEEDED: standby current] [DATA_NEEDED: standby current]
Operating Current [DATA_NEEDED: operating current] [DATA_NEEDED: operating current]
RoHS Status [DATA_NEEDED: RoHS status] unknown
Supply Voltage — 5 V
Memory Format — SRAM
Clock Frequency — N/A (asynchronous)
Refresh — Not required (static memory)

Datasheets & Resources

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