K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP
MPN: K6X0808C1D-GF70000 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.25 | $625.00 |
| 1,000 | $1.1 | $1,100.00 |
Drop-in alternatives for K6X0808C1D-GF70000 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K6X0808C1D-BF70T
β Drop-Inβ In Stock
$1.05 / Unit
View Datasheet βK6X0808C1D-GF55000
β Drop-Inβ In Stock
$3.2 / Unit
View Datasheet βK6X0808C1D-BF55
β Drop-Inβ In Stock
$1.85 / Unit
View Datasheet βK6X0808C1D-GF70000 Maximum Ratings & Electrical Characteristics
| Memory Type | SRAM - Asynchronous |
| Memory Size | 256 Kbit |
| Organization | 32K x 8 bit |
| Interface | Parallel |
| Access Time | 70 ns |
| Supply Voltage - Min | 4.5 V |
| Supply Voltage - Max | 5.5 V |
| Technology | Low Power CMOS |
| Address Bus Width | 15 bit (A0-A14) |
| Data Bus Width | 8 bit (tri-state I/O) |
| Control Signals | CE, OE, WE |
| Input/Output Levels | TTL compatible |
| Package | 28-SOP |
| Mounting Type | Surface Mount |
K6X0808C1D-GF70000 Pin Configuration
| Pin 1 | A14 β Address input bit 14 |
| Pin 2 | A12 β Address input bit 12 |
| Pin 3 | A7 β Address input bit 7 |
| Pin 4 | A6 β Address input bit 6 |
| Pin 5 | A5 β Address input bit 5 |
| Pin 6 | A4 β Address input bit 4 |
| Pin 7 | A3 β Address input bit 3 |
| Pin 8 | A2 β Address input bit 2 |
| Pin 9 | A1 β Address input bit 1 |
| Pin 10 | A0 β Address input bit 0 |
| Pin 11 | I/O1 β Data input/output bit 1 |
| Pin 12 | I/O2 β Data input/output bit 2 |
| Pin 13 | I/O3 β Data input/output bit 3 |
| Pin 14 | GND β Ground |
| Pin 15 | I/O4 β Data input/output bit 4 |
| Pin 16 | I/O5 β Data input/output bit 5 |
| Pin 17 | I/O6 β Data input/output bit 6 |
| Pin 18 | I/O7 β Data input/output bit 7 |
| Pin 19 | I/O8 β Data input/output bit 8 |
| Pin 20 | CE β Chip enable (active low) |
| Pin 21 | A10 β Address input bit 10 |
| Pin 22 | OE β Output enable (active low) |
| Pin 23 | A11 β Address input bit 11 |
| Pin 24 | A9 β Address input bit 9 |
| Pin 25 | A8 β Address input bit 8 |
| Pin 26 | A13 β Address input bit 13 |
| Pin 27 | WE β Write enable (active low) |
| Pin 28 | VCC β Power supply, 4.5V to 5.5V |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K6X0808C1D-GF70000 is suitable for 6 applications: Industrial Control Systems, Automotive Electronics, Test and Measurement Instruments, Legacy Communication Equipment, Embedded System Main Memory, Battery-Backed Data Retention.
Industrial Control Systems
In PLCs, motor controllers, and factory automation nodes, the K6X0808C1D-GF70000 serves as byte-wide working RAM for setpoint tables, PID loop variables, and event logs. Its 70ns access time comfortably keeps pace with 8-bit and 16-bit industrial microcontrollers running at tens of MHz, while the fully asynchronous CE/OE/WE interface requires no memory controller timing tuning. The 4.5V-5.5V supply matches the 5V logic rails standard on legacy industrial backplanes, and the low-power CMOS core keeps standby consumption minimal for always-on equipment. The 28-SOP surface-mount package withstands vibration better than DIP alternatives, supporting long service life on factory floors. Note that its data is volatile, so battery backup or NVSRAM pairing is needed for power-fail data retention.
Recommended
Automotive Electronics
Legacy automotive ECUs, instrument clusters, and body-control modules used 5V SRAM like the K6X0808C1D-GF70000 for adaptive parameter storage, fault-code buffers, and intermediate signal-processing scratchpads. The 70ns access time is sufficient for crankshaft-speed calculations and sensor averaging loops in older 5V MCU platforms, and the TTL-compatible I/O connects directly to era-appropriate processors with no level shifting. Its 32K x 8 organization matches byte-oriented ECU data structures exactly. The surface-mount 28-SOP package suits conformally coated under-hood electronics, though designers must confirm the temperature range option in the ordering code meets their zone requirement, as this standard grade is not an AEC-Q100-qualified device by default.
Recommended
Test and Measurement Instruments
Bench multimeters, oscilloscope auxiliary memories, and data loggers use the K6X0808C1D-GF70000 as fast acquisition scratchpad memory. The 70ns address-to-data delay supports waveform-sampling architectures that capture 8-bit samples at multi-MHz effective rates, and the deterministic asynchronous timing simplifies FPGA or microprocessor bus interfacing without refresh scheduling jitter. Its tri-state I/O bus allows multiple memory devices to share a single 8-bit data path, enabling banked memory expansion in 5V instrument designs. The low-power CMOS process reduces internal heating in sealed bench enclosures. For new designs, engineers typically pair the SRAM with a 5V-tolerant FPGA or use level translators when the host logic runs at 3.3V.
Recommended
Legacy Communication Equipment
Telecom line cards, modems, and network controllers from the 5V era rely on parts like the K6X0808C1D-GF70000 for packet buffers, call-state tables, and configuration scratchpads. The 256Kbit capacity holds typical framing buffers for serial and early LAN protocols, while the 70ns access time supports line-rate processing for interfaces up to several Mbit/s. Because the pinout follows the industry-standard 32K x 8 SRAM map, field-repair and continuity-of-supply programs can substitute same-family parts without PCB respins, which is critical for systems with 20-plus-year service commitments. The 28-SOP footprint is widely second-sourced for spare-board manufacture. Designers should confirm RoHS status of the specific ordering code for any rework into lead-free assemblies.
Recommended
Embedded System Main Memory
General-purpose 8-bit and 16-bit embedded systems built around 5V MCUs use the K6X0808C1D-GF70000 as external main or overlay memory. A 15-bit address bus and byte-wide data bus connect directly to standard MCU expansion ports, and the CE/OE/WE control lines implement standard asynchronous bus cycles with no configuration registers or clocks. The 70ns speed grade meets the wait-state-free timing of most 5V microcontrollers up to roughly 16-25 MHz system clocks. Low CMOS standby current suits battery-backed or sleep-heavy applications, and the surface-mount 28-SOP package allows compact two-layer board layouts. For designs needing code storage as well, engineers typically add parallel Flash alongside the SRAM rather than relying on volatile memory alone.
Recommended
Battery-Backed Data Retention
Applications requiring data to survive power loss pair the K6X0808C1D-GF70000 with a lithium coin cell and a supervisor IC that switches CE high (deselect) as VCC falls, leveraging the low-power CMOS data-retention mode of the K6X0808C1D family. Typical retention currents for 5V low-power CMOS SRAMs are in the microamp range, allowing years of retention from a small cell, though the exact standby figure for this part should be taken from the Samsung K6X0808C1D datasheet rather than assumed. This architecture persists meters reading, calibration constants, and audit logs in utility and payment equipment without EEPROM wear concerns. The 70ns access time restores full-speed operation instantly on power-up, faster than Flash re-read architectures.
Recommended
Recommended Products Summary
Engineering reference data for K6X0808C1D-GF70000 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K6X0808C1D-BF70T | K6X0808C1D-GF55000 | K6X0808C1D-BF55 |
|---|---|---|---|---|
| Package | 28-SOP | 28-SOP - same | 28-SOP - same | 28-SOP - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Organization | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) | 32K x 8 (256 Kbit) |
| Access Time | 70 ns | 70 ns | 55 ns | 55 ns |
| Supply Voltage | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V |
| Interface | Parallel (CE/OE/WE) | Parallel (CE/OE/WE) | Parallel (CE/OE/WE) | Parallel (CE/OE/WE) |
| Drop-in Compatible | - | Yes - pin-to-pin | Yes - pin-to-pin | Yes - pin-to-pin |
| Price (qty 1, as of 2026-09-01) | USD 1.85 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- True 5V CMOS operation without level shifting (vs K6X0808C1D-BF70T)
- 70ns speed grade balances cost and timing margin (vs K6X0808C1D-GF55000)
- Industry-standard 32Kx8 pinout enables continuation supply (vs K6X0808C1D-BF55)
Design Notes
The K6X0808C1D-GF70000 is a 5V TTL-interface device. When connecting to 3.3V MCUs or FPGAs, verify that every connected input is 5V tolerant; otherwise insert series resistors with clamping or a dedicated level translator (e.g., a 74LVC245 direction-controlled bus transceiver). Keep the 15-line address bus length-matched loosely - at 70ns timing, standard two-layer PCB routing under 15cm introduces negligible skew, but avoid routing address lines parallel to switching power traces.
Decouple VCC (pin 28) to GND (pin 14) with a 0.1uF ceramic capacitor placed within 5mm of the package, plus one 4.7uF-10uF bulk capacitor per SRAM bank. The 28-SOP footprint generally matches the industry-standard wide SOIC-28 land pattern used for 32Kx8 SRAMs - verify the body width option (300 vs 330 mil class) in the Samsung ordering code against your land pattern before tape-out.
Do not substitute the K6X1008C2D (128Kx8) or K6X4008C1F (4Kx8) on the same footprint - their densities change address pin assignments and they are NOT drop-in compatible despite the family similarity. For write cycles, ensure WE meets the datasheet write-pulse width and that CE and WE never assert simultaneously with OE low during a write, which would cause bus contention. Estimated: at 5V and typical CMOS SRAM operating currents of a few tens of milliamps, power dissipation is well under 200mW, so no thermal copper pour is needed.
Compliance Information
The K6X0808C1D is a legacy 5V SRAM; the provided web data does not state RoHS/REACH/lead-free status for this ordering code. Verify compliance certificates with Samsung or the distributor before lead-free assembly.
