K6X0808C1D-GF70000 vs K6X0808C1D-BF70T Comparison

Detailed side-by-side comparison of K6X0808C1D-GF70000 by Samsung Electronics and K6X0808C1D-BF70T by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K6X0808C1D-GF70000 K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP

K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP

K6X0808C1D-GF70000 ✓ Active
Samsung Electronics
K6X0808C1D-BF70T K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T ✓ Active

Specification Comparison

Parameter K6X0808C1D-GF70000 K6X0808C1D-BF70T
Brand Samsung Electronics Samsung Electronics
Category DRAM DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.10 $1.05
Memory Type SRAM - Asynchronous SRAM - Asynchronous
Memory Size 256 Kbit 256 Kbit
Organization 32K x 8 bit —
Interface Parallel —
Access Time 70 ns 70 ns
Supply Voltage - Min 4.5 V —
Supply Voltage - Max 5.5 V —
Technology Low Power CMOS —
Address Bus Width 15 bit (A0-A14) 15 bit (A0-A14)
Data Bus Width 8 bit (tri-state I/O) 8 bit (I/O0-I/O7)
Control Signals CE, OE, WE CE, OE, WE
Input/Output Levels TTL compatible —
Package 28-SOP 28-SOP
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] -40C to +85C (TA)
Standby Current [DATA_NEEDED: standby current] —
Operating Current [DATA_NEEDED: operating current] —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Memory Organization — 32K x 8
Memory Interface — Parallel
Write Cycle Time - Word, Page — 70 ns
Voltage - Supply — 4.5 V to 5.5 V
Process Technology — CMOS
I/O Compatibility — TTL compatible
Refresh Requirement — None (fully static operation)

Datasheets & Resources

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