K9DUGY8S0M-CCK0 vs K9HQGY8S5M Comparison
Detailed side-by-side comparison of K9DUGY8S0M-CCK0 by Samsung Electronics and K9HQGY8S5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung
K9DUGY8S0M-CCK0 ✓ ActiveSamsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActiveSpecification Comparison
| Parameter | K9DUGY8S0M-CCK0 | K9HQGY8S5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 series NAND Flash (V-NAND) | — |
| Memory Type | NAND Flash (raw, controller-managed) | — |
| Cell Technology | V-NAND (vertical charge-trap) | — |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: total bit density] |
| Interface | [DATA_NEEDED: interface type/width] | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Supply Voltage | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Read Time | [DATA_NEEDED: tR] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Package | [DATA_NEEDED: package code and pin count] | — |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| P/E Cycle Endurance | [DATA_NEEDED: endurance] | — |
| Product Type | — | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance rating] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |