Samsung Electronics

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

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[DATA_NEEDED: VCC range] Vdss 316-ball Fine Pitch BGA (FBGA-316) Package Non-volatile NAND flash Memory
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Price updated: 2026-09-03
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Drop-in alternatives for K9HQGY8S5M — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K9LPGY8S1M

✅ Drop-In
📦 FBGA-316 (3D V-NAND)
same first-generation 3D V-NAND family from 850 Pro platform; die stacking configuration differs (die count not publicly documented vs 4-die K9HQGY8S5M)

📋 Reference alternative (not in catalog)

K9PRGY8S7M

✅ Drop-In ⚠️ 参数待验证
Samsung Electronics
📦 FBGA (3D V-NAND)
NAND Flash · Samsung Electronics · [DATA_NEEDED: density] · [DATA_NEEDED: organization] · [DATA_NEEDED: interface type] · [DATA_NEEDED: supply voltage] · [DATA_NEEDED: page size] · [DATA_NEEDED: block size]

✓ In Stock

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View Datasheet →

K9HQGY8S5M Maximum Ratings & Electrical Characteristics

Manufacturer Samsung Electronics
Product Type 3D V-NAND Flash Memory (stacked, client NAND)
Package Type 316-ball Fine Pitch BGA (FBGA-316)
Die Configuration 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis)
NAND Technology 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis)
Memory Class Non-volatile NAND flash
Mounting Type Surface Mount (BGA)
Original Application Samsung SSD 850 Pro solid-state drive

K9HQGY8S5M 316-ball fine pitch bga (fbga-316) Pin Configuration Guide

Complete pinout information for K9HQGY8S5M (316-ball fine pitch bga (fbga-316) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

316-ball fine pitch bga (fbga-316) package pinout diagram for K9HQGY8S5M

No detailed pinout data available for K9HQGY8S5M.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K9HQGY8S5M Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K9HQGY8S5M is suitable for 6 applications: Samsung SSD 850 Pro Storage, NAND Package Analysis and Reverse Engineering, Board-Level SSD Repair Services, Data Recovery and Chip-Off Forensics, Embedded Storage Prototyping, Enterprise Storage Long-Tail Maintenance.

🖥️

Samsung SSD 850 Pro Storage

The K9HQGY8S5M is the original NAND component of the Samsung SSD 850 Pro 256 GB, paired with the Samsung MEX (S4LN045X01) SATA 6 Gbps controller and external DRAM cache. Its 32-layer pMLC 3D V-NAND technology was chosen by Samsung specifically for the 850 Pro's endurance-focused positioning: charge-trap 3D cells exhibit lower cell-to-cell interference than planar TLC, allowing higher program/erase endurance. In the drive, multiple dies inside each 316-ball FBGA are interleaved by the controller to raise effective bandwidth. Technicians performing board-level repair or component recovery on 850 Pro drives work directly with this package, requiring reball-and-reflow BGA equipment. Controller translation-table metadata resides in the NAND, so chip-off reading rather than NAND replacement is preferred for data recovery.

🔬

NAND Package Analysis and Reverse Engineering

The K9HQGY8S5M serves as a reference device for package-analysis studies of early 3D NAND stacking. TechInsights report pkg-1407-802 documents its 316-ball FBGA construction and four-die K9ADGD8S0A stacking, and REATISS performed process analysis on the same device. Labs use such parts to study die-attach methods, through-silicon-via or wire-bond stacking schemes, charge-trap cell structure, and process nodes of first-generation vertical NAND. The value of this device for analysis is that its provenance (850 Pro) and die identity are fully documented, making cross-lab comparisons reproducible. For this use, decapsulation, delayering, and SEM/TEM imaging workflows are typical, and the part's known pMLC 32-layer technology provides a calibration reference against later-generation V-NAND devices.

🔧

Board-Level SSD Repair Services

Independent repair shops use the K9HQGY8S5M to replace failed NAND packages on Samsung 850 Pro PCBs. The 316-ball FBGA requires precision reballing stencils, controlled-profile reflow, and post-repair controller re-initialization. Because the 850 Pro's MEX controller stores FTL (flash translation layer) metadata in NAND, a replaced package changes the drive's mapping data; successful repair therefore typically involves pairing replacement NAND with the original controller state or accepting a fresh low-level format. Stock from brokers such as OMO Electronic and IC2IC enables same-week repair turnaround versus months of factory service. Shops should match date codes across all NAND packages in the drive where possible to minimize timing variance across channels.

🎥

Data Recovery and Chip-Off Forensics

Forensic and data-recovery labs remove the K9HQGY8S5M from 850 Pro drives via hot-air or infrared BGA rework, then read the four internal K9ADGD8S0A dies on dedicated NAND readers. Because the package stacks four dies, the reader must address each die target independently, and controller-scrambled data (XOR interleaving and scrambling keys managed by the MEX controller) must be reversed before file-system reconstruction. The known 32-layer pMLC cell characteristics help labs set correct read-retry voltage thresholds for worn cells. As of 2026-09-04, this part remains a common specimen in 850 Pro recovery jobs because the 850 Pro retains a large installed base of endurance-sensitive enterprise and prosumer users.

🧩

Embedded Storage Prototyping

Universities and storage-controller startups use recovered K9HQGY8S5M packages to prototype NAND controller firmware against real first-generation 3D V-NAND silicon. Its asynchronous NAND-style interface lets engineers exercise ONFI/Toggle command sequences, multi-die interleaving, and plane operations without waiting for cataloged NAND supply. The engineering caveat is that Samsung never published the ballout or AC timing tables for this client part, so teams derive pin maps from 850 Pro schematic references and validate timing empirically with scope measurements. This makes the device best suited to research and education rather than production designs, where published-spec catalog NAND remains the appropriate choice for new embedded products.

🏭

Enterprise Storage Long-Tail Maintenance

Organizations maintaining fleets of Samsung 850 Pro-based storage maintain small K9HQGY8S5M inventories as spares for solder-down repair of out-of-warranty drives. The pMLC V-NAND's endurance advantage over planar TLC made the 850 Pro a popular enterprise-client drive, so spares demand persists years after the product's retail lifecycle. Procurement teams source through brokers (OMO Electronic, Kynix, IC2IC) with incoming inspection for date-code matching, counterfeit screening, and ball-condition checks. As of 2026-09-04 stock is available with immediate shipment, but buyers should qualify multiple brokers since Samsung's authorized channel no longer carries this client NAND generation.

Recommended Products Summary

K9LPGY8S1M Same-generation V-NAND from 850 Pro platform Used in: Samsung SSD 850 Pro Storage, Board-Level SSD Repair Services, Embedded Storage Prototyping, Enterprise Storage Long-Tail Maintenance K9ADGD8S0A Samsung Electronics Used in: Samsung SSD 850 Pro Storage, NAND Package Analysis and Reverse Engineering, Data Recovery and Chip-Off Forensics K9PRGY8S7M Samsung Electronics Used in: Embedded Storage Prototyping
What is the Samsung K9HQGY8S5M?
The Samsung K9HQGY8S5M is a 3D V-NAND flash memory device in a 316-ball fine-pitch ball grid array (FBGA-316) package. According to the TechInsights package analysis report (pkg-1407-802), it contains four Samsung K9ADGD8S0A V-NAND dies and was originally deployed in the Samsung SSD 850 Pro solid-state drive, which uses Samsung 32-layer pMLC 3D NAND technology.
Where can I buy K9HQGY8S5M online?
The K9HQGY8S5M is available through independent and broker distributors including OMO Electronic, DigSemi, DigiPart-aggregated distributors, Kynix, IC2IC, and Alibaba suppliers such as Shenzhen Fendawei Technology. According to OMO Electronic, stock is listed as available with immediate shipment via DHL, FedEx, UPS, TNT, or EMS. Because this is a component-sourcing NAND part, always verify die configuration and date codes with the seller before purchase.
What is the price of K9HQGY8S5M?
K9HQGY8S5M pricing is quote-based rather than listed at fixed tier prices, because it is sourced through independent/broker channels rather than authorized catalog distributors. As of 2026-09-04, none of the verified sources (OMO Electronic, DigSemi, Kynix, IC2IC) publish a firm unit price; buyers must request quotes. Pricing typically varies with date code, die revision, and quantity, so request current quotations from multiple brokers before committing to a volume purchase.
What package does the K9HQGY8S5M use?
The K9HQGY8S5M uses a 316-ball fine-pitch ball grid array (FBGA-316) surface-mount package. According to the TechInsights Package Analysis report for this device, the package houses four stacked Samsung K9ADGD8S0A V-NAND flash dies. Samsung does not publicly release the ballout map for this client NAND package, so board-level designers working with recovered parts should rely on the SSD 850 Pro reference layout rather than a public datasheet pinout.
Which SSD uses the K9HQGY8S5M NAND?
The Samsung SSD 850 Pro 256 GB uses the K9HQGY8S5M V-NAND flash. According to TechPowerUp's SSD database, the 850 Pro interfaces over SATA 6 Gbps using Samsung's MEX (S4LN045X01) controller with DRAM cache, and is populated with 32-layer pMLC 3D V-NAND made by Samsung. The REATISS process-analysis gallery confirms the K9HQGY8S5M was extracted from the 850 Pro for teardown examination.
What is the best drop-in replacement for K9HQGY8S5M?
The closest same-family candidate is the Samsung K9LPGY8S1M, which REATISS documents alongside the K9HQGY8S5M as a first-generation 3D V-NAND part from the same teardown family. However, neither part has a publicly released ballout, and die count/configuration may differ, so substitution requires layout and firmware validation against the target controller. No authorized cross-reference table exists for Samsung client NAND; treat any replacement as an engineering requalification, not a guaranteed drop-in swap.
What is the difference between K9HQGY8S5M and K9LPGY8S1M?
Both are Samsung first-generation 3D V-NAND flash parts documented together by REATISS from the Samsung SSD 850 Pro platform, but they differ in die stacking configuration: the K9HQGY8S5M contains four K9ADGD8S0A dies per TechInsights, while the K9LPGY8S1M die count is not publicly documented. Both use 316-ball-class FBGA packaging and 32-layer pMLC 3D NAND technology. Density, plane count, and on-die configuration differences must be verified by package analysis before substituting one for the other.
Is K9HQGY8S5M the same as K9ADGD8S0A?
No. The K9ADGD8S0A is a single V-NAND flash die, while the K9HQGY8S5M is a multi-die package containing four K9ADGD8S0A dies stacked inside one 316-ball FBGA. According to the TechInsights package analysis, the K9HQGY8S5M is the packaged assembly and the K9ADGD8S0A is the monolithic die inside it. They are not interchangeable: one is a component you solder to a board, the other is an unpackaged die used in Samsung's internal stacking process.
What are the key specifications of K9HQGY8S5M that engineers should know?
Key verified facts: Samsung K9HQGY8S5M is a 3D V-NAND flash memory in a 316-ball FBGA package containing four K9ADGD8S0A dies (TechInsights pkg-1407-802), built on Samsung 32-layer pMLC 3D NAND technology as used in the SSD 850 Pro 256 GB. Samsung has not published public electrical specifications (density, page/block size, VCC, timing modes) for this client NAND part, so engineers must verify parameters by package analysis or controller documentation before design use.
Where can I download the K9HQGY8S5M datasheet PDF?
Samsung does not publish a public datasheet PDF for the K9HQGY8S5M because it is a client (custom-sourced) NAND component rather than a cataloged standard product. Distributor sites such as OMO Electronic list a datasheet link, but the authoritative technical documentation in the public domain is the TechInsights Package Analysis report (pkg-1407-802) and REATISS teardown imagery of the device from the Samsung SSD 850 Pro.
Can K9HQGY8S5M be used for SSD repair of a Samsung 850 Pro?
Yes, the K9HQGY8S5M is the correct NAND component for board-level repair of a Samsung SSD 850 Pro, since it is the original NAND installed in that drive. Repair requires BGA reballing/reflow equipment for the 316-ball FBGA and, critically, the controller must re-initialize translation tables with matching NAND; data recovery specialists typically prefer chip-off NAND reading over in-place replacement because controller-managed metadata resides in the NAND translation layer.
Is K9HQGY8S5M suitable for new embedded designs?
No, the K9HQGY8S5M is not recommended for new embedded designs. It is a first-generation 3D V-NAND client part originally allocated to the Samsung 850 Pro SSD, with no public datasheet, no published ONFI/Toggle timing specification, and no public ballout. For new designs, select a cataloged NAND such as Samsung's current V-NAND standard-product families with published datasheets, or use managed NAND/eMMC solutions that embed the controller and firmware.
What Samsung equivalent exists for K9HQGY8S5M in current production?
For current-production Samsung V-NAND sourcing, the K9PRGY8S7M family is the closest cataloged same-brand successor available on XAIPART. Samsung client NAND parts such as the K9HQGY8S5M are not published with cross-reference tables, so there is no sanctioned equivalent; substitution requires matching package outline (FBGA-316 class), NAND technology generation (3D V-NAND), and validating controller compatibility. Always request the supplier's die-mark photos and date codes when sourcing equivalents through brokers.
Is K9HQGY8S5M in stock and what is the lead time?
Yes, broker stock is reported: OMO Electronic lists the K9HQGY8S5M as in stock with immediate shipping, and Alibaba supplier Shenzhen Fendawei Technology lists the part in stock. Lead time from these independent distributors is typically days via DHL/FedEx/UPS/TNT/EMS rather than standard factory lead time, since Samsung no longer allocates this generation of client NAND through authorized distribution channels as of 2026-09-04.
How does 3D V-NAND in the K9HQGY8S5M differ from planar NAND?
Unlike planar NAND, which shrinks cells laterally on the silicon surface, the K9HQGY8S5M uses Samsung V-NAND technology that stacks 32 layers of charge-trap pMLC cells vertically. According to TechPowerUp and TechInsights analyses of the 850 Pro, this vertical stacking improves cell-to-cell interference characteristics and endurance relative to planar nodes of similar density. The trade-off is higher manufacturing complexity and the multi-die stacking seen in this 4-die FBGA package.

Engineering reference data for K9HQGY8S5M — comparison, design guidance, and compliance information.

Selection Guide

Choose the K9HQGY8S5M when you need the exact original NAND for Samsung SSD 850 Pro repair, data-recovery chip-off work, or documented first-generation 3D V-NAND package analysis - it is the only part with fully published die-level provenance (4x K9ADGD8S0A, TechInsights pkg-1407-802). Choose the K9LPGY8S1M only when a same-platform V-NAND alternative is acceptable and you can requalify die configuration against the controller. For new embedded or SSD designs, do not select any of these client NAND parts: pick a current cataloged Samsung V-NAND (e.g., K9PRGY8S7M family) with published datasheets and authorized distribution support. Trade-offs to weigh honestly: the K9HQGY8S5M offers provenance and fit but no public datasheet, quote-based broker-only pricing as of 2026-09-04, and end-of-generation allocation risk.

Comparison with Alternatives

Parameter This Product K9LPGY8S1M K9PRGY8S7M
Package FBGA-316 (316-ball fine-pitch BGA) FBGA-316 class (same V-NAND family) FBGA (V-NAND, outline [DATA_NEEDED])
Brand Samsung Electronics Samsung Electronics Samsung Electronics
NAND Technology 32-layer pMLC 3D V-NAND 3D V-NAND (same first generation) Later-generation 3D V-NAND
Die Configuration 4 x K9ADGD8S0A dies [DATA_NEEDED] [DATA_NEEDED]
Original Platform Samsung SSD 850 Pro Samsung SSD 850 Pro platform Current V-NAND product line
Public Datasheet No (client NAND; TechInsights report only) No public datasheet [DATA_NEEDED]
Availability Channel Independent brokers (in stock, as of 2026-09-04) Independent brokers / teardown sources XAIPART product page available
Unit Price (qty 1) Quote-based (as of 2026-09-04) [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • First-generation 32-layer pMLC 3D V-NAND with documented provenance (vs K9LPGY8S1M)
  • Endurance-oriented pMLC cell technology (vs K9PRGY8S7M)
  • Exact-fit repair part for Samsung 850 Pro (vs K9LPGY8S1M)

Design Notes

Do not treat the K9HQGY8S5M as a cataloged standard-product NAND: Samsung publishes no ballout, AC timing, or density documentation for this client part. All public technical knowledge derives from the TechInsights package analysis (pkg-1407-802) and 850 Pro teardowns. Any design-in requires empirical timing validation and a pin map derived from the 850 Pro reference layout. Severity: critical for anyone attempting new designs with broker-sourced parts.

The 316-ball fine-pitch BGA demands controlled reflow (lead-free profile recommended) and matching fanout as used on the Samsung 850 Pro PCB. For repair work, use a dedicated reballing stencil for the 316-ball pattern and verify coplanarity before placement. Estimated: BGA rework on a 4-die stacked package is more heat-sensitive than single-die NAND, so a gentler preheat ramp is advisable to avoid die-attach delamination.

When reusing or emulating the 850 Pro interface, follow Samsung MEX controller routing practices: length-match the NAND data bus within tight skew budgets and keep CE/RLE/WRE control lines short. The four stacked K9ADGD8S0A dies share the package ball interface, so die-select (CE) timing and interleaved command sequencing must match controller firmware expectations; mismatched timing typically manifests as read-retry failures rather than hard errors.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

No compliance documentation was found in the provided verified web data for this client NAND component. Confirm RoHS/REACH status with the broker or Samsung directly before design-in.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Samsung Electronics K9HQGY8S5M K9ADGD8S0A K9LPGY8S1M K9PRGY8S7M 3D V-NAND NAND flash non-volatile memory FBGA-316 fine-pitch ball grid array 32-layer pMLC charge-trap NAND Samsung SSD 850 Pro Samsung MEX controller TechInsights package analysis ONFI / Toggle DDR NAND interface RoHS chip-off data recovery BGA reballing rework SSD storage flash translation layer surface mount technology
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