K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung
MPN: K9DUGY8S0M-CCK0 ✓ Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9DUGY8S0M-CCK0 Overview
NAND flash is a non-volatile memory technology that stores data in floating-gate or charge-trap cells arranged in strings, organized internally into pages and blocks. Within the memory hierarchy of a storage system, NAND flash sits below DRAM as the persistent storage medium, interfacing to a memory controller that manages ECC, wear leveling, and bad-block management. V-NAND stacks cells vertically, allowing higher density per die area than planar NAND.
Key characteristics of this Samsung K9-series V-NAND include high per-die density, a standard NAND asynchronous or toggled interface to a host controller, and Samsung's charge-trap V-NAND cell technology. These features reduce cost per gigabit, increase endurance per layer, and shorten data-path access compared with earlier planar generations, which is why the K9 series is widely used in mass-storage products built around a dedicated NAND controller.
Architecturally, the device organizes storage into multiple planes with page-program and block-erase operations managed by command sequences on the NAND bus. Like all raw NAND devices, it does not include an internal controller; ECC (typically BCH or LDPC in the host controller), bad-block table management, and wear-leveling firmware are responsibilities of the companion controller, so system-level design effort concentrates on the controller-firmware pairing.
Typical applications include SSD modules, eMMC and UFS storage builds using controller companion devices, set-top box and smart TV persistent storage, industrial recorders, networking equipment configuration storage, and automotive infotainment media storage. In these roles the K9-series device provides the raw capacity while the controller provides the managed-NAND abstraction.
A key design consideration is that raw NAND requires rigorous ECC and block management: always reserve extra blocks for bad-block replacement and use the datasheet-recommended program/erase cycle limits when sizing endurance. Signal integrity on the shared NAND bus also matters at higher toggle-mode speeds.
This page synthesizes distributor availability data, Samsung K9-family cross references, drop-in alternative candidates, and practical design notes not consolidated in the manufacturer datasheet, offering a single reference point for sourcing and selection decisions as of 2026-09-04.
Drop-in alternatives for K9DUGY8S0M-CCK0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with K9DUGY8S0M-CCK0 (same form factor and footprint) — differing in Memory Type, RoHS Status, Product Family, Mounting Type, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K9DUGY8S0M-4000
✅ Drop-In📋 Reference alternative (not in catalog)
K9DUGY8S7M
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
Contact for price
View Datasheet →K9DUGB8S7M
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
Contact for price
View Datasheet →K9PKGY8S7M-CCK0
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
$9.4 / Unit
View Datasheet →K9PRGY8S7M-CCK0
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
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View Datasheet →K9HQGY8S5M
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
Contact for price
View Datasheet →K9DUGY8S0M-CCK0 Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Product Family | K9 series NAND Flash (V-NAND) |
| Memory Type | NAND Flash (raw, controller-managed) |
| Cell Technology | V-NAND (vertical charge-trap) |
| Mounting Type | Surface Mount |
| RoHS Status | unknown |
K9DUGY8S0M-CCK0 standard Pin Configuration Guide
Pin configuration for K9DUGY8S0M-CCK0 (standard package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K9DUGY8S0M-CCK0.
Refer to the datasheet for full pin configuration.
Typical Applications
K9DUGY8S0M-CCK0 is suitable for 6 applications: SSD Storage Modules, Set-Top Box and Smart TV Storage, Industrial Data Recorders, Networking and Telecom Equipment, Automotive Infotainment Media Storage, Embedded System Firmware and Data Storage.
SSD Storage Modules
Raw V-NAND devices like the K9DUGY8S0M-CCK0 form the storage array of client and industrial SSDs, paired with a dedicated SSD controller that implements the flash translation layer, LDPC ECC, and garbage collection. Samsung's own SSD ecosystem (PM9B1, 980 PRO per TechPowerUp documentation) uses 128-layer Samsung TLC V-NAND in exactly this controller-plus-raw-NAND topology, confirming the architecture's suitability. In an SSD build, multiple NAND packages share data and command buses in a chip-enable-star configuration to widen parallel bandwidth; sustained write performance is then bounded by program-page times and channel count. This part fits best in cost-optimized designs where its V-NAND density lowers cost per gigabyte.
Recommended
Set-Top Box and Smart TV Storage
Consumer media devices need multi-gigabyte persistent storage for firmware, channel databases, and DVR buffering, and raw K9-series V-NAND behind a low-cost SoC controller is the standard implementation. The K9DUGY8S0M-CCK0's V-NAND density allows a single or dual package to hold the full content library, while the SoC's built-in BCH/LDPC ECC handles data integrity without a separate controller chip. Because these devices run modest write workloads, the program/erase endurance of TLC-class V-NAND is more than sufficient for years of service. Design effort centers on the ONFI/toggle timing match between the SoC memory controller and this Samsung device, plus correct bad-block table initialization at factory programming.
Recommended
Industrial Data Recorders
Industrial loggers and black-box recorders accumulate sensor data continuously, making high-density NAND attractive; the K9DUGY8S0M-CCK0 supplies the capacity while an industrial NAND controller with power-fail recovery protects write integrity. Raw NAND suits this role because the system integrator can implement custom wear-leveling policies matched to the write pattern, extending effective life beyond what a fixed FTL would achieve. Power-loss robustness requires the controller to support partial-page program abort and a journaling scheme, since a program interrupt mid-page can corrupt the page. Verify the datasheet's program-suspend/resume support when designing power-fail-safe logging, and reserve factory-marked plus spare blocks for the replacement pool.
Recommended
Networking and Telecom Equipment
Routers, switches, and base-station equipment store firmware images, configuration files, and log buffers in NAND flash. The K9DUGY8S0M-CCK0 offers the density needed for dual-firmware-image schemes (A/B partitions with rollback), where two complete images are maintained for failsafe OTA updates. Samsung V-NAND retention specifications support multi-year firmware persistence, while the controller-managed ECC corrects bit errors accumulated over read-disturb cycles. For these always-on systems, ambient temperature and thermal design matter: the FBGA package dissipates little power, but sustained operation at enclosure temperatures near the datasheet maximum shortens retention, so derating the environment or selecting a wider temperature suffix is recommended during design-in.
Recommended
Automotive Infotainment Media Storage
Automotive head units and cluster systems use NAND arrays behind a qualifying controller for maps, media caches, and settings storage. While the K9DUGY8S0M-CCK0 must be checked for the appropriate temperature grade suffix before automotive use, the K9-family architecture - controller plus raw V-NAND with LDPC ECC - is the same topology used in automotive eMMC derivatives. Vibration tolerance comes from the FBGA solder-ball attachment, which withstands mechanical stress better than leaded edge connections, and thermal cycling performance depends on PCB land-pattern design per Samsung mounting guidelines. Capacities of this class comfortably hold navigation databases, and the NAND's block architecture supports the sequential-read-heavy access profile typical of map rendering.
Recommended
Embedded System Firmware and Data Storage
General embedded platforms - from medical devices to IoT gateways - use raw NAND when storage needs exceed what NOR or small managed flash offers. The K9DUGY8S0M-CCK0 provides that bulk capacity at V-NAND economics, with the MCU or a companion controller managing bad blocks, wear leveling, and ECC in software or a hardware engine. Bootstrapping typically uses a small NOR or eMMC boot stage because raw NAND cannot execute-in-place, so the K9 device serves as the data/code volume mounted by the OS. Its page-based organization (read/write by page, erase by block) shapes filesystem choice: log-structured filesystems such as UBIFS or JFFS2-style layers over an MTD subsystem fit the erase-block granularity naturally.
Recommended
Recommended Products Summary
Engineering reference data for K9DUGY8S0M-CCK0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9DUGY8S0M-4000 | K9DUGY8S7M | K9DUGB8S7M | K9PKGY8S7M-CCK0 |
|---|---|---|---|---|---|
| Package | FBGA (surface mount) | FBGA - same family | FBGA - same family | FBGA - same family | FBGA - same family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Technology | V-NAND (K9 series) | V-NAND (same base die) | V-NAND (same generation) | V-NAND (same generation) | V-NAND (newer generation) |
| Controller Requirement | External NAND controller with ECC required | Same - raw NAND | Same - raw NAND | Same - raw NAND | Same - raw NAND |
| Lifecycle Availability | Broker channels active (2026-09-04) | Broker listings active (worldwayelec, omo-ic) | On XAIPART catalog | On XAIPART catalog | On XAIPART catalog |
| Recommended Use | Approved-BOM maintenance designs | Direct suffix substitute | Shortage fallback / new designs | Alternate configuration option | Generation refresh designs |
Key Differentiators
- Exact-BOM continuity within the K9DUGY8S0M base part (vs K9DUGY8S0M-4000)
- V-NAND cell technology (vs K9HQGY8S5M)
- Cost per bit advantage over managed NAND (vs K9PKGY8S7M-CCK0)
- Trade-off: no integrated controller or ECC (vs Samsung managed-NAND modules)
Design Notes
At toggle-mode or ONFI timing classes, the shared NAND bus becomes timing-critical. Keep R/B (ready/busy), CLE, ALE, and DQ trace lengths matched within the controller datasheet skew budget, and series-terminate command/address lines to reduce ringing on the strobe edges. On multi-die (chip-enable shared) buses, capacitive loading rises with each added package - re-verify setup/hold margins with all loads populated rather than one. Route DQ lines on a solid ground reference and avoid crossing plane splits; reflective failures typically appear as correctable-but-increasing ECC error counts, so monitor ECC statistics in firmware as an early warning indicator.
Raw NAND has no internal ECC or wear leveling - omitting these is the most common field-failure cause. Implement the full bad-block flow: read factory-marked bad blocks after first power-up, store the table in a reserved area, and never erase block 0 or the bad-block table blocks. Use program-suspend/resume if your controller supports it so background erase does not stall real-time tasks. Finally, do not assume cross-vendor NAND compatibility: Micron or Kioxia parts differ in ball map, die-select straps, and timing sets from Samsung K9 devices, so substitutes require controller re-validation even when capacity matches.
Follow Samsung's FBGA mounting guidelines for land pattern and stencil design: use a solder-mask-defined or non-solder-mask-defined pad per the datasheet footprint drawing, with roughly 60-70% stencil aperture ratio on center balls to prevent ball bridging during reflow. Add X-ray or at minimum 2D/3D SPI inspection at the assembly step since FBGA joints are hidden after reflow. Provide a firm ground connection to the device's ground balls through multiple vias, and keep decoupling capacitors for the VCC/VCCQ rails within a few millimeters of the package. These practices protect solder-joint reliability through thermal cycling.
Decouple the VCC and VCCQ rails independently: place 100 nF ceramic capacitors at each supply ball plus a bulk 10 uF per device. Program and erase operations draw pulsed current on VCC that can droop the rail if the bulk capacitance is shared too widely across multiple NAND packages - one bulk capacitor per package is a safe rule. Confirm the exact supply voltage class (typically 2.7-3.6 V VCC with a separate VCCQ for the I/O ring on modern generations) from the Samsung datasheet before finalizing the power tree, since suffix options can change voltage requirements.
Compliance Information
Compliance status for this specific suffix was not present in the verified web data. Samsung standard products are typically RoHS-compliant, but this must be confirmed on the Samsung product page or certificate of conformance - not assumed here.
