K9DVGY8J5M vs K9PKGY8S7M-CCK0 Comparison
Detailed side-by-side comparison of K9DVGY8J5M by Samsung Electronics and K9PKGY8S7M-CCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9DVGY8J5M | K9PKGY8S7M-CCK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.00 | $9.40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | — |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| Interface Type | [DATA_NEEDED: interface (toggle DDR / async)] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: package type and dimensions] | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | Lead free / RoHS compliant |
| Memory Capacity | — | 128 Gb (16 GB) |
| Memory Type | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Package | — | BGA |
| Interface | — | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Supply Voltage | — | [DATA_NEEDED: supply voltage] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |