K9DVGY8J5M vs K9PKGY8S7M-CCK0 Сравнение
Подробное сравнение бок о бок K9DVGY8J5M от Samsung Electronics и K9PKGY8S7M-CCK0 от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung
K9DVGY8J5M ✓ Активен
Сравнение характеристик
| Параметр | K9DVGY8J5M | K9PKGY8S7M-CCK0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,00 | $9,40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | — |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| Тип интерфейса | [DATA_NEEDED: interface (toggle DDR / async)] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: package type and dimensions] | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | [DATA_NEEDED: RoHS status] | Lead free / RoHS compliant |
| Memory Capacity | — | 128 Gb (16 GB) |
| Тип памяти | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Корпус | — | BGA |
| Интерфейс | — | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Напряжение питания | — | [DATA_NEEDED: supply voltage] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |