K9EUGY8S0M-CCK0 vs K9HQGY8S5M Comparison

Detailed side-by-side comparison of K9EUGY8S0M-CCK0 by Samsung Electronics and K9HQGY8S5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K9EUGY8S0M-CCK0 K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 ✓ Active
Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ Active

Specification Comparison

Parameter K9EUGY8S0M-CCK0 K9HQGY8S5M
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D TLC V-NAND Flash Memory 3D V-NAND Flash Memory (stacked, client NAND)
Density [DATA_NEEDED: total device density in Gb] [DATA_NEEDED: total bit density]
Cell Type TLC (3 bits per cell) —
V-NAND Layers [DATA_NEEDED: layer count] —
Interface [DATA_NEEDED: interface type, e.g. Toggle DDR] NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode]
Supply Voltage VCC [DATA_NEEDED: VCC core supply voltage] —
Supply Voltage VCCQ [DATA_NEEDED: VCCQ I/O supply voltage] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Package Type [DATA_NEEDED: FBGA ball count and dimensions] 316-ball Fine Pitch BGA (FBGA-316)
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Grade Suffix CCK0 (standard commercial grade) —
Mounting Type Surface Mount (BGA) Surface Mount (BGA)
RoHS Status [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Die Configuration — 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis)
NAND Technology — 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis)
Memory Class — Non-volatile NAND flash
Supply Voltage — [DATA_NEEDED: VCC range]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance rating]
MSL Level — [DATA_NEEDED: moisture sensitivity level]
Original Application — Samsung SSD 850 Pro solid-state drive

Datasheets & Resources

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