K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung
MPN: K9EUGY8S0M-CCK0 ✓ Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
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Drop-in alternatives for K9EUGY8S0M-CCK0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K9EUGY8S0M-BCK0
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View Datasheet →K9DUGY8S0M-CCK0
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View Datasheet →K9DUGY8S0M-BCK0
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View Datasheet →K9CHGY8S5C-CCK0
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View Datasheet →K9HQGY8S5M
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View Datasheet →K9PRGY8S7M-CCK0
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View Datasheet →K9EUGY8S0M-CCK0 Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Product Type | 3D TLC V-NAND Flash Memory |
| Cell Type | TLC (3 bits per cell) |
| Grade Suffix | CCK0 (standard commercial grade) |
| Mounting Type | Surface Mount (BGA) |
K9EUGY8S0M-CCK0 [data_needed: fbga ball count and dimensions] Pin Configuration Guide
Complete pinout information for K9EUGY8S0M-CCK0 ([data_needed: fbga ball count and dimensions] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: fbga ball count and dimensions] package pinout diagram for K9EUGY8S0M-CCK0](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9EUGY8S0M-CCK0.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9EUGY8S0M-CCK0 is suitable for 6 applications: Client SSD Storage, Embedded USB Flash Drives, Memory Cards, Industrial Storage Modules, Set-Top Box and Smart TV Storage, Networking and Router Storage.
Client SSD Storage
The K9EUGY8S0M-CCK0 fits client SSD designs where 256 Gb-class TLC V-NAND provides the best balance of density, endurance, and per-bit cost for mainstream consumer capacity points. Placed behind an SSD controller with an LDPC ECC engine, the TLC cells deliver multi-terabyte DWPD-class endurance appropriate for boot and general-purpose drives. Its toggle-mode interface sustains the sequential bandwidth that PCIe and SATA controllers expect, and multi-plane operation parallelizes program and erase to keep queue depths serviced. Designers should verify the controller's supported NAND profile list includes this Samsung generation before board bring-up.
Recommended
Embedded USB Flash Drives
USB flash controller vendors pair K9EUGY8S0M-CCK0-class TLC V-NAND with single-chip USB 3.x controllers to build 32 GB-per-die-tier flash drives. The 256 Gb density keeps the BOM to one or two packages for mainstream capacities, cutting cost and PCB area versus lower-density planar NAND. Because USB controllers handle ECC, wear leveling, and bad-block management internally, the raw V-NAND drops into a reference design with minimal firmware change - provided the controller firmware image supports this Samsung generation's toggle timing. Thermal design should confirm the FBGA stays within datasheet limits under sustained sequential write loads.
Recommended
Memory Cards
SD and microSD card manufacturers use K9EUGY8S0M-CCK0-class 256 Gb TLC V-NAND inside molded card assemblies, where package height and power draw are tightly constrained. V-NAND's vertical stack delivers high capacity in a small footprint, and TLC density keeps per-card BOM cost competitive in consumer price tiers. The card controller manages program/erase cycling and LDPC decoding, so the NAND must appear on the controller's qualified list. Designers should validate that read current stays within the card's power budget on mobile hosts, and confirm grade-suffix definitions cover the consumer temperature envelope for the target card class.
Recommended
Industrial Storage Modules
In industrial storage - rugged SSDs, logging recorders, and embedded modules - K9EUGY8S0M-CCK0 serves as the storage element behind an industrial controller with enhanced ECC and power-fail protection. TLC V-NAND suits read-mostly and moderate-write industrial workloads; write-heavy logging should employ SLC-cache firmware or pSLC mode where the controller supports it. Verify the CCK0 grade's operating temperature range against the module spec, and design power-fail circuitry so in-flight program operations do not corrupt data. Industrial customers typically require vendor-managed change notification, so confirm Samsung lifecycle status before design-in.
Recommended
Set-Top Box and Smart TV Storage
Set-top boxes and smart TVs store firmware, channel databases, and DVR buffers on K9EUGY8S0M-CCK0-class raw TLC V-NAND connected to an SoC's integrated NAND controller. The 256 Gb density covers typical 8-32 GB eMMC-class capacity requirements with a single stacked package, and TLC cost meets consumer BOM targets. SoC boot ROMs usually require a specific toggle-mode profile, so confirm the SoC's supported Samsung NAND list. Because these products run continuous background recording, wear-leveling configuration and TV-logging write amplification should be tuned to keep TLC endurance within the 3-5 year product lifetime.
Recommended
Networking and Router Storage
Enterprise Wi-Fi routers, mesh nodes, and NVR gateways use K9EUGY8S0M-CCK0-class V-NAND for firmware image storage, container filesystems, and local video buffering. The TLC density enables feature-rich firmware images plus persistent journals without a separate NOR boot device in many designs (boot code typically remains in NOR/SPINOR, with rootfs on this NAND). Raw NAND requires the SoC's NAND controller to implement ECC and bad-block handling at boot; verify the bootloader chain supports this Samsung generation. Consider temperature derating for passive-cooled network equipment enclosures, since sustained DVR writes heat the FBGA above ambient.
Recommended
Recommended Products Summary
Engineering reference data for K9EUGY8S0M-CCK0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9EUGY8S0M-BCK0 | K9DUGY8S0M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|---|---|
| Package | FBGA (Samsung V-NAND molded BGA) | FBGA - same family package | FBGA - same family package | FBGA - same family package |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC (3 bits/cell) | TLC | TLC | TLC |
| V-NAND Generation | [DATA_NEEDED] | Same generation as this product | Prior generation | [DATA_NEEDED] |
| Grade Suffix | CCK0 | BCK0 | CCK0 | CCK0 |
| Interface | [DATA_NEEDED: Toggle DDR / ONFI per datasheet] | Same interface as this product | Toggle-mode DDR (family standard) | [DATA_NEEDED] |
| Controller Firmware Requirement | Samsung NAND profile in controller support list | Same profile requirement | K9DU profile | K9CH profile |
| Primary Use Case | SSD / USB / embedded storage | SSD / USB / embedded storage | Cost-optimized storage builds | Alternate density tiers |
Key Differentiators
- Latest same-die family sourcing option (vs K9DUGY8S0M-CCK0)
- Dual-sourcing within identical silicon (vs K9EUGY8S0M-BCK0)
- CCK0 grade consistency (vs K9CHGY8S5C-CCK0)
Design Notes
Never connect K9EUGY8S0M-CCK0 directly to a general-purpose bus. As raw TLC V-NAND, it requires a dedicated controller or SoC NAND engine providing LDPC/ECC, bad-block management, wear leveling, and correct toggle-mode timing. Using a controller firmware that does not list this Samsung generation in its supported NAND profile table will cause boot failures or silent data corruption. Always validate with the controller vendor's qualification suite before mass production.
NAND devices in this family use separate core and I/O supplies (VCC and VCCQ) with defined power-up sequencing in the Samsung datasheet. Because the exact voltage values for this MPN are NDA datasheet items, do not copy rail voltages from older-generation schematics - obtain the K9EUGY8S0M datasheet and confirm. Add bulk plus 0.1uF decoupling at each supply ball group and ensure power-fail protection holds program-in-progress operations within the datasheet's tVCC_rise/fall constraints.
For FBGA NAND, fan out signal balls with length-matched, daisy-chained routing to the controller, keeping the DQ/RE/WP command group stub-free and within the interface's flight-time budget. Use a solid ground reference plane directly under the NAND-to-controller nets, and place series termination per the reference design in the controller vendor's layout guide. High-layer-count V-NAND draws higher peak current during program operations than planar NAND, so verify plane copper and via stitching for the return path.
Compliance Information
Compliance status for this MPN was not stated in the retrieved web data. Samsung consumer NAND is typically RoHS-compliant, but per data authenticity policy the status must be confirmed from Samsung's official environmental documentation rather than assumed.
