K9NUGY8R6B-BCQ0 vs K9MUGY8R4A-CCQ0 Comparison
Detailed side-by-side comparison of K9NUGY8R6B-BCQ0 by Samsung Electronics and K9MUGY8R4A-CCQ0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
K9NUGY8R6B-BCQ0 ✓ ActiveSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActiveSpecification Comparison
| Parameter | K9NUGY8R6B-BCQ0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9NUGY series NAND flash | K9 V-NAND (NAND Flash) |
| Memory Type | NAND Flash | — |
| Density | [DATA_NEEDED: total density] | [DATA_NEEDED: total density] |
| Cell Technology | [DATA_NEEDED: SLC/MLC/TLC] | — |
| Organization | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Supply Voltage VCC | [DATA_NEEDED: VCC range] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ range] | — |
| Interface | Asynchronous NAND I/O (command/address/data multiplexed) | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: tR] | — |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: package code] | [DATA_NEEDED: package type and pin count] |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Cell Type | — | [DATA_NEEDED: cell type (MLC/TLC)] |
| Interface Type | — | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |