K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
MPN: K9MUGY8R4A-CCQ0 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K9MUGY8R4A-CCQ0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K9MUGY8R4A-BCQ0
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View Datasheet →K9LUGY8J7D-CCK0
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View Datasheet →K9LUGY8J7D-BCK0
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View Datasheet →K9KUGY8J7C-CCK0
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →K9KUGY8J7C-BCK0
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$9.55 / Unit
View Datasheet →K9MUGY8R4A-CCQ0 Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Product Family | K9 V-NAND (NAND Flash) |
| Memory Technology | V-NAND (vertical NAND flash) |
| Mounting Type | Surface Mount |
K9MUGY8R4A-CCQ0 [data_needed: package type and pin count] Pin Configuration Guide
Complete pinout information for K9MUGY8R4A-CCQ0 ([data_needed: package type and pin count] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package type and pin count] package pinout diagram for K9MUGY8R4A-CCQ0](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9MUGY8R4A-CCQ0.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9MUGY8R4A-CCQ0 is suitable for 6 applications: Enterprise SSD Storage, Client SSD and Embedded Storage, Surveillance and DVR Storage, Industrial Data Logging, Networking and Communications Equipment, Aerospace and UAV Data Recorders.
Enterprise SSD Storage
Samsung K9-family V-NAND devices such as K9MUGY8R4A-CCQ0 are core building blocks of enterprise solid-state drives, where high bit density drives cost per gigabyte. The V-NAND vertical-cell architecture delivers the die-level density SSD controllers require when populating multi-terabyte drive platforms. In this role the NAND die interfaces to an SSD controller over the toggle/DDR-style I/O bus, with the controller handling LDPC ECC, wear leveling, and FTL mapping. Designers must match the controller's flash-configuration table to the K9M generation's page and block organization, and budget board area for multiple parallel channels to reach target bandwidth.
Recommended
Client SSD and Embedded Storage
Client SSDs and embedded storage modules use K9-series V-NAND dies for their balance of density, endurance, and cost. The K9MUGY8R4A-CCQ0 fits client platforms where TLC-class density is preferred over enterprise-optimized endurance, allowing slimmer BOM cost in consumer laptops and desktops. Integration typically places multiple dies in a shared package (multi-die MCP) or on a BGA-footprint module; surface-mount assembly supports standard reflow processes. Performance considerations include configuring the controller for the K9M timing set and verifying thermal envelope, since high-speed toggle I/O under sustained write load raises die temperature and can trigger thermal throttling in thin client enclosures.
Recommended
Surveillance and DVR Storage
Video surveillance recorders require sustained sequential write throughput and high density at low cost, making Samsung K9-family V-NAND a natural fit. The K9MUGY8R4A-CCQ0 provides the persistent storage layer behind a write-optimized controller that smooths continuous multi-camera video streams into sequential NAND writes. TLC-class V-NAND handles the high write volume with wear-leveling firmware spreading program/erase cycles evenly across blocks. Designers should size endurance headroom to the expected years-of-write workload and implement power-loss protection (capacitor-backed flush) so in-flight pages are committed safely when recorder power is interrupted unexpectedly.
Recommended
Industrial Data Logging
Industrial loggers and gateways store years of sensor, event, and audit-trail data locally, and K9-series V-NAND gives them gigabyte-to-terabyte capacity on a small surface-mount footprint. The K9MUGY8R4A-CCQ0 is used behind an embedded controller implementing flash translation, ECC, and power-fail recovery. Industrial environments add requirements: extended temperature operation must be confirmed against the datasheet's operating range for this grade suffix, and write endurance must be modeled against the duty cycle of frequent small log writes. Firmware should batch small writes and reserve static over-provisioning to extend usable life in always-on installations.
Recommended
Networking and Communications Equipment
Routers, switches, and 5G network appliances use NAND flash for firmware images, configuration stores, and logging. Samsung V-NAND dies such as the K9MUGY8R4A-CCQ0 provide the non-volatile layer in these systems, usually paired with NOR flash for boot code and DRAM for runtime buffers. The V-NAND's high density accommodates growing OS images and telemetry logs, while the toggle I/O interface delivers fast image loading at boot. Design considerations include supply-rail sequencing with the system DRAM, EMI-aware routing of the high-speed I/O bus, and dual-bank firmware layouts that keep a validated golden image copy in case an update is interrupted.
Recommended
Aerospace and UAV Data Recorders
Flight data recorders and UAV mission loggers need maximum capacity per gram and per watt, which drives selection of high-density V-NAND like the K9MUGY8R4A-CCQ0. Multiple dies populate compact recorder boards that capture sensor and telemetry streams, with the storage controller applying strong ECC and interleaved block management to protect data under vibration and radiation-tolerant system constraints. Power budgeting matters: NAND read/write energy per byte is low, but sustained logging on battery-powered UAVs benefits from page-buffer batching and write coalescing. Designers must also verify the commercial-grade suffix's temperature envelope against the mission profile before flight qualification.
Recommended
Recommended Products Summary
Engineering reference data for K9MUGY8R4A-CCQ0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9MUGY8R4A-BCQ0 | K9LUGY8J7D-CCK0 | K9KUGY8J7C-CCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Product Generation | K9M generation V-NAND | K9M generation - same | K9L generation | K9K generation |
| Memory Technology | V-NAND (vertical NAND) | V-NAND - same die | V-NAND | V-NAND |
| Density Class | [DATA_NEEDED] | Same as target (same die) | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Endurance | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Price (qty 1) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Same-die grade variant availability (vs K9MUGY8R4A-BCQ0)
- V-NAND vertical architecture (vs K9KUGY8J7C-CCK0)
- Generation gap trade-off (vs K9LUGY8J7D-CCK0)
Design Notes
High-density V-NAND devices use toggle/DDR-style I/O buses whose speeds require careful signal integrity practice: keep DQ and RE#/DQS trace lengths matched within the controller datasheet's skew budget, route the I/O bus on inner layers with solid reference planes, and limit stub lengths when multiple dies share a channel. Series termination on controller outputs and ODT (on-die termination) settings in the NAND configuration registers should be tuned per the Samsung datasheet's signal-integrity section. Verify eye diagrams at maximum rated speed across all channels during bring-up, not just one representative channel.
NAND flash uses separate VCC (core) and VCCQ (I/O) supply rails; both must be within the datasheet range before command sequences are issued, and power sequencing between the rails must follow the Samsung datasheet's power-up requirements to avoid latching issues. Decouple each rail with bulk capacitance plus high-frequency ceramics placed within a few millimeters of each supply pin, since multi-die channels draw transient current bursts during program operations. Implement brown-out detection and a power-fail flush routine in firmware so in-flight pages are recovered after unexpected power loss.
The most common integration failure is controller/NAND configuration mismatch: every Samsung K9 generation has its own page size, block size, timing set (tR, tPROG, tBERS), and ONFI/toggle parameter page. Reusing a K9K or K9L configuration table with a K9M die causes read errors that look like defective flash. Second, never assume a same-family suffix variant is identical - Samsung orderable-code suffixes can encode speed grade, package thickness, or temperature range. Always read the parameter page and validate the exact orderable code against the Samsung ordering-information table before production release.
Compliance Information
Compliance status was not present in the verified web data retrieved for this part; consult Samsung's official compliance documentation for K9MUGY8R4A-CCQ0.
