K9PKGY8S7M-CCK0 vs K9HQGY8S5M Comparison
Detailed side-by-side comparison of K9PKGY8S7M-CCK0 by Samsung Electronics and K9HQGY8S5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActiveSpecification Comparison
| Parameter | K9PKGY8S7M-CCK0 | K9HQGY8S5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.40 | $0.00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| Memory Type | NAND Flash | — |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Package | BGA | — |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Interface | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Supply Voltage | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E endurance rating] |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS Status | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Product Type | — | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Density | — | [DATA_NEEDED: total bit density] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |