K9PKGY8S7M-CCK0 vs K9HQGY8S5M Vergleich
Detaillierter Direktvergleich von K9PKGY8S7M-CCK0 von Samsung Electronics und K9HQGY8S5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ AktivSpezifikationsvergleich
| Parameter | K9PKGY8S7M-CCK0 | K9HQGY8S5M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,40 | $0,00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| Speichertyp | NAND Flash | — |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Gehäuse | BGA | — |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Schnittstelle | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Versorgungsspannung | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E endurance rating] |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Product Type | — | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Density | — | [DATA_NEEDED: total bit density] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |