M29F160FB55N3F2 vs M29F200FB55N3F2 Comparison

Detailed side-by-side comparison of M29F160FB55N3F2 by Micron Technology and M29F200FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete
Micron Technology
M29F200FB55N3F2 M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 ✓ Active

Specification Comparison

Parameter M29F160FB55N3F2 M29F200FB55N3F2
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $5.60 $4.20
Memory Type Parallel NOR Flash Parallel NOR Flash
Density 16777 kbits (16 Mbit) 2 Mbit (2097 kbits)
Organization 1 Mword x 16 bits / 2 Mbyte x 8 bits 256K x 8 bit / 128K x 16 bit
Number of Words 1000 k 128 K (x16 mode)
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage 5 V —
Boot Block Architecture Bottom Boot Block Bottom Boot Block (FB)
Operating Temperature -40 to +125 C -40C to +125C
Interface Parallel Parallel
Package Type 48-TSOP —
Mounting Type Surface Mount Surface Mount
Termination Finish Lead-free (F2 suffix) —
Program/Erase Controller Embedded byte/word program algorithms —
Block Protection Hardware boot block protection —
RoHS Status Compliant (lead-free) [DATA_NEEDED: RoHS compliance status]
Speed Grade (from MPN) 55 (55 ns) —
Supply Voltage (VCC) — 5 V
Programming — Embedded byte/word program algorithm
Erase — Embedded block erase controller
Package — 48-TSOP I
Packaging — Tape & Reel (TR)
Endurance — [DATA_NEEDED: program/erase cycles]

Datasheets & Resources

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