M29F400FB55N3F2 vs M29F200FB55N3F2 Comparison
Detailed side-by-side comparison of M29F400FB55N3F2 by Micron Technology and M29F200FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ ActiveSpecification Comparison
| Parameter | M29F400FB55N3F2 | M29F200FB55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $4.20 |
| Memory Type | NOR Flash | Parallel NOR Flash |
| Density | 4 Mbit (4194 kbit) | 2 Mbit (2097 kbits) |
| Organization | 256K x 16 / 512K x 8 | 256K x 8 bit / 128K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 5 V | — |
| Interface | Parallel | Parallel |
| Boot Block | Bottom boot block | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Package | 48-TSOP I | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS Status | Compliant (lead-free build per F2 suffix) | [DATA_NEEDED: RoHS compliance status] |
| Number of Words | — | 128 K (x16 mode) |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Architecture | — | Bottom Boot Block (FB) |
| Programming | — | Embedded byte/word program algorithm |
| Erase | — | Embedded block erase controller |
| Packaging | — | Tape & Reel (TR) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |