M29F800FB55N3F2 vs M29F800FB55M3F2 Comparison
Detailed side-by-side comparison of M29F800FB55N3F2 by Micron Technology and M29F800FB55M3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ Active
Specification Comparison
| Parameter | M29F800FB55N3F2 | M29F800FB55M3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.47 | $3.72 |
| Memory Density | 8389 kbits (8 Mbit) | — |
| Organization | 1M x 8 / 512K x 16 | 512K x 16-bit / 1M x 8-bit |
| Supply Voltage | 5 V | — |
| Access Time | 55 ns | 55 ns |
| Interface Type | Parallel NOR | — |
| Boot Block Architecture | Bottom Boot Block | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Temperature Grade | Automotive (AEC-Q100) | — |
| Package Type | 48-pin TSOP1 | — |
| Package Shape | Rectangular (JESD designation TSOP1) | — |
| Terminal Count | 48 | — |
| JESD-609 Termination Code | e3 (lead-free) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| RoHS Status | Compliant (lead-free terminations) | [DATA_NEEDED: RoHS status] |
| Memory Type | — | NOR Flash, Parallel |
| Density | — | 8389 kbits (8 Mbit) |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Type | — | Bottom Boot Block |
| Interface | — | Parallel, Asynchronous |
| Programming | — | Embedded byte/word program algorithms |
| OTP Area | — | 64 byte |
| Automotive Qualification | — | Auto Grade 3 (temperature grade 3, +125C) |
| Package | — | 44-pin SO (SOIC-44) |
| Packing | — | Tape & Reel (T/R) |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |