M29F800FB55N3F2 vs M29F800FB55M3F2 对比

详细并排对比 M29F800FB55N3F2 出自 Micron Technology 和 M29F800FB55M3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ 量产中
Micron Technology
M29F800FB55M3F2 M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 ✓ 量产中

规格对比

参数 M29F800FB55N3F2 M29F800FB55M3F2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.47 $3.72
Memory Density 8389 kbits (8 Mbit) —
存储组织 1M x 8 / 512K x 16 512K x 16-bit / 1M x 8-bit
电源电压 5 V —
Access Time 55 ns 55 ns
接口类型 Parallel NOR —
Boot Block Architecture Bottom Boot Block —
Program/Erase Controller Embedded byte/word program algorithms —
工作温度 -40C to +125C -40C to +125C
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 —
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
RoHS 状态 Compliant (lead-free terminations) [DATA_NEEDED: RoHS status]
存储器类型 — NOR Flash, Parallel
Density — 8389 kbits (8 Mbit)
Number of Words — 512 k
Bits per Word — 16 bits
Supply Voltage (VCC) — 5 V
Boot Block Type — Bottom Boot Block
接口 — Parallel, Asynchronous
Programming — Embedded byte/word program algorithms
OTP Area — 64 byte
Automotive Qualification — Auto Grade 3 (temperature grade 3, +125C)
封装 — 44-pin SO (SOIC-44)
Packing — Tape & Reel (T/R)
Endurance — [DATA_NEEDED: program/erase endurance cycles]

数据手册与资源

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