M29F800FT55M3F2 vs M29F800FB55M3F2 Comparison
Detailed side-by-side comparison of M29F800FT55M3F2 by Micron Technology and M29F800FB55M3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ ActiveSpecification Comparison
| Parameter | M29F800FT55M3F2 | M29F800FB55M3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $3.72 |
| Memory Type | Parallel NOR Flash | NOR Flash, Parallel |
| Density | 8 Mbit (8389 kbits) | 8389 kbits (8 Mbit) |
| Organization | 512K x 16 / 1M x 8 | 512K x 16-bit / 1M x 8-bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | 5 V |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Package | 44-pin SO (SOP) | 44-pin SO (SOIC-44) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Interface | Parallel, x8/x16 selectable | Parallel, Asynchronous |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS Status | Compliant (lead-free suffix F2) | [DATA_NEEDED: RoHS status] |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Boot Block Type | — | Bottom Boot Block |
| Programming | — | Embedded byte/word program algorithms |
| OTP Area | — | 64 byte |
| Automotive Qualification | — | Auto Grade 3 (temperature grade 3, +125C) |
| Packing | — | Tape & Reel (T/R) |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |