M29W064FT70N3E vs M29W128GH70N3E Comparison
Detailed side-by-side comparison of M29W064FT70N3E by Micron Technology and M29W128GH70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W064FT70N3E | M29W128GH70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | NOR Flash (Parallel) | NOR Flash |
| Density | 64 Mbit | — |
| Organization | 8 Mb x8 or 4 Mb x16 | 8M x 16 / 16M x 8 |
| Interface | Parallel, CFI compliant | Parallel (asynchronous) |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Boot Block Architecture | Top boot block (FT) | — |
| Operating Temperature | -40C to +85C | -40C to +125C |
| Package | 48-TSOP | 56-TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | [DATA_NEEDED: endurance] |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Memory Size | — | 128 Mbit (16 MB) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 56 |
| Data Bus Width | — | 16 bit (byte/word selectable) |
| Memory Density | — | 131072 kbit |
| Programming | — | Command-sequence program/erase with status polling |
| Application Segment | — | Automotive / Industrial code storage |