M29W064FT70N3E vs M29W128GH70N3E Vergleich
Detaillierter Direktvergleich von M29W064FT70N3E von Micron Technology und M29W128GH70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W064FT70N3E | M29W128GH70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Speichertyp | NOR Flash (Parallel) | NOR Flash |
| Density | 64 Mbit | — |
| Speicherorganisation | 8 Mb x8 or 4 Mb x16 | 8M x 16 / 16M x 8 |
| Schnittstelle | Parallel, CFI compliant | Parallel (asynchronous) |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Boot Block Architecture | Top boot block (FT) | — |
| Betriebstemperatur | -40C to +85C | -40C to +125C |
| Gehäuse | 48-TSOP | 56-TSOP |
| Montageart | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | [DATA_NEEDED: endurance] |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Speichergröße | — | 128 Mbit (16 MB) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 56 |
| Datenbusbreite | — | 16 bit (byte/word selectable) |
| Memory Density | — | 131072 kbit |
| Programming | — | Command-sequence program/erase with status polling |
| Application Segment | — | Automotive / Industrial code storage |