M29W064FT70N3F vs M29W064FT70N3E Comparison
Detailed side-by-side comparison of M29W064FT70N3F by Micron Technology and M29W064FT70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W064FT70N3F | M29W064FT70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.30 | $0.00 |
| Memory Type | NOR Flash | NOR Flash (Parallel) |
| Density | 64 Mbit | 64 Mbit |
| Organization | 8 Mbit x8 / 4 Mbit x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interface | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Top boot block (FT) | — |
| Operating Temperature | -40C to +125C | -40C to +85C |
| Package | 48-TSOP I | 48-TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | No |
| Width | x8/x16 | — |
| RoHS Status | unknown | [DATA_NEEDED: RoHS compliance status] |
| Supply Voltage | — | 2.7 V to 3.6 V |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |