M29W064FT70N3F vs M29W064FT70N3E Comparación
Comparación detallada lado a lado de M29W064FT70N3F por Micron Technology y M29W064FT70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W064FT70N3F | M29W064FT70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $6,30 | $0,00 |
| Tipo de memoria | NOR Flash | NOR Flash (Parallel) |
| Density | 64 Mbit | 64 Mbit |
| Organización de memoria | 8 Mbit x8 / 4 Mbit x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interfaz | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Top boot block (FT) | — |
| Temperatura de funcionamiento | -40C to +125C | -40C to +85C |
| Encapsulado | 48-TSOP I | 48-TSOP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | No |
| Width | x8/x16 | — |
| Estado RoHS | unknown | [DATA_NEEDED: RoHS compliance status] |
| Tensión de alimentación | — | 2.7 V to 3.6 V |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |