M29W064FT70N3F vs M29W064FT70N3E Vergleich
Detaillierter Direktvergleich von M29W064FT70N3F von Micron Technology und M29W064FT70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W064FT70N3F | M29W064FT70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,30 | $0,00 |
| Speichertyp | NOR Flash | NOR Flash (Parallel) |
| Density | 64 Mbit | 64 Mbit |
| Speicherorganisation | 8 Mbit x8 / 4 Mbit x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Schnittstelle | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Top boot block (FT) | — |
| Betriebstemperatur | -40C to +125C | -40C to +85C |
| Gehäuse | 48-TSOP I | 48-TSOP |
| Montageart | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | No |
| Width | x8/x16 | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS compliance status] |
| Versorgungsspannung | — | 2.7 V to 3.6 V |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |