M29W128GH70N3E vs M29W128GH70ZA3E Comparison
Detailed side-by-side comparison of M29W128GH70N3E by Micron Technology and M29W128GH70ZA3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron
M29W128GH70ZA3E ✓ ActiveSpecification Comparison
| Parameter | M29W128GH70N3E | M29W128GH70ZA3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $2.70 |
| Memory Type | NOR Flash | NOR Flash |
| Memory Size | 128 Mbit (16 MB) | 128 Mbit |
| Organization | 8M x 16 / 16M x 8 | 8M x 16 |
| Interface | Parallel (asynchronous) | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage range] |
| Operating Temperature | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Temperature Grade | Automotive | — |
| Package | 56-TSOP | 64-TBGA (10x13 mm) |
| Number of Terminals | 56 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Data Bus Width | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot (GH suffix) |
| Program/Erase Voltage | — | [DATA_NEEDED: program/erase voltage] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| CFI Compliant | — | [DATA_NEEDED: CFI compliance] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |