M29W400FB55N3E vs M29W320DB70N3E Comparison

Detailed side-by-side comparison of M29W400FB55N3E by Micron Technology and M29W320DB70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ Active
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ Active

Specification Comparison

Parameter M29W400FB55N3E M29W320DB70N3E
Brand Micron Technology Micron Technology
Category EEPROM Flash
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $1.95
Memory Type NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) 32 Mbit (33554 kbits)
Organization 512K x 8 bit / 256K x 16 bit 2M x 16
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Interface Parallel, 8-bit/16-bit (BYTE# selectable) Parallel
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Non-uniform parameter blocks, boot block (bottom boot, DB type)
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
Operating Temperature -40C to +125C -40C to +125C
Package 48-TSOP I, 12 x 20 mm 48-TSOP I
Pins 48 —
Mounting Type Surface Mount Surface Mount
Packaging Tray —
RoHS Status Compliant ROHS3 Compliant
Speed Grades in Family 55 ns, 70 ns —
Number of Words — 2000 k
Bits per Word — 16 bits
VPP Fast Program Voltage — 12 V (optional)
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

Datasheets & Resources

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