M29W400FB55N3E vs M29W320DB70N3E 对比

详细并排对比 M29W400FB55N3E 出自 Micron Technology 和 M29W320DB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ 量产中
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ 量产中

规格对比

参数 M29W400FB55N3E M29W320DB70N3E
品牌 Micron Technology Micron Technology
分类 EEPROM Flash
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $1.95
存储器类型 NOR Flash (parallel) NOR Flash
Density 4 Mbit (4194 kbits) 32 Mbit (33554 kbits)
存储组织 512K x 8 bit / 256K x 16 bit 2M x 16
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
接口 Parallel, 8-bit/16-bit (BYTE# selectable) Parallel
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) Non-uniform parameter blocks, boot block (bottom boot, DB type)
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
工作温度 -40C to +125C -40C to +125C
封装 48-TSOP I, 12 x 20 mm 48-TSOP I
Pins 48 —
安装类型 Surface Mount Surface Mount
Packaging Tray —
RoHS 状态 Compliant ROHS3 Compliant
Speed Grades in Family 55 ns, 70 ns —
Number of Words — 2000 k
Bits per Word — 16 bits
VPP Fast Program Voltage — 12 V (optional)
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

数据手册与资源

浏览全部产品 创建 BOM 获取报价