M29W640GB70N3E vs M29W320DB70N3F Comparison
Detailed side-by-side comparison of M29W640GB70N3E by Micron Technology and M29W320DB70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W640GB70N3E | M29W320DB70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Flash |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.05 | $1.30 |
| Memory Type | NOR Flash | NOR Flash |
| Density | 64 Mbit (8 MByte) | 32 Mbit (33554 kbits) |
| Interface | Parallel, asynchronous | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | — |
| Organization | 4M x16 / 8M x8 | 2 M x 16 |
| Boot Block | Bottom boot block (GB) | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Package | 48-TSOP I | 48-TSOP I, 12 x 20 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Programming | Word/Byte program, block erase | — |
| Command Set | M29W family standard command set | — |
| Chipset Validation | N/A | — |
| FBGA Code | N/A | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | — | Parallel NOR Flash |
| Bus Width | — | x8/x16 selectable |
| Supply Voltage (VCC) | — | 3.0 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V |
| Block Organization | — | Non-uniform parameter blocks, boot block (DB = bottom boot block) |
| Packaging Variant (TR) | — | Tape & Reel available (M29W320DB70N3F TR) |