M29W640GB70N3F vs M29W640GT70N3F Comparison
Detailed side-by-side comparison of M29W640GB70N3F by Micron Technology and M29W640GT70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W640GB70N3F | M29W640GT70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Obsolete | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.66 | $0.00 |
| Memory Type | NOR Flash, Parallel | NOR Flash - Parallel |
| Density | 64 Mb (8 MB) | 64 Mbit (8M x 8 / 4M x 16) |
| Organization | x8 / x16 | 8M x 8 / 4M x 16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Operating Temperature | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Qualification | Automotive AEC-Q100 | — |
| Package | 48-TSOP I | 48-TSOP I (N3) |
| Mounting Type | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | Top boot block |
| Part Status | Obsolete | Obsolete |
| RoHS Status | Compliant (per JLCPCB listing) | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: ICC standby] |
| Read Current | [DATA_NEEDED: active read current] | — |
| Programming Voltage | — | 3 V (single supply) |
| Bus Width | — | x8 / x16 selectable |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Packaging | — | Tape & Reel (TR) |
| Temperature Grade | — | Automotive |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Data Retention | — | [DATA_NEEDED: retention] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |