M29W640GB70N3F vs M29W640GT70N3F Comparación
Comparación detallada lado a lado de M29W640GB70N3F por Micron Technology y M29W640GT70N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W640GB70N3F | M29W640GT70N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,66 | $0,00 |
| Tipo de memoria | NOR Flash, Parallel | NOR Flash - Parallel |
| Density | 64 Mb (8 MB) | 64 Mbit (8M x 8 / 4M x 16) |
| Organización de memoria | x8 / x16 | 8M x 8 / 4M x 16 |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Qualification | Automotive AEC-Q100 | — |
| Encapsulado | 48-TSOP I | 48-TSOP I (N3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | Top boot block |
| Part Status | Obsolete | Obsolete |
| Estado RoHS | Compliant (per JLCPCB listing) | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: ICC standby] |
| Read Current | [DATA_NEEDED: active read current] | — |
| Programming Voltage | — | 3 V (single supply) |
| Bus Width | — | x8 / x16 selectable |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Packaging | — | Tape & Reel (TR) |
| Temperature Grade | — | Automotive |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Data Retention | — | [DATA_NEEDED: retention] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |