M29W640GB70N3F vs M29W640GT70N3F Comparaison
Comparaison détaillée côte à côte de M29W640GB70N3F par Micron Technology et M29W640GT70N3F par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | M29W640GB70N3F | M29W640GT70N3F |
|---|---|---|
| Marque | Micron Technology | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,66 | $0,00 |
| Type de mémoire | NOR Flash, Parallel | NOR Flash - Parallel |
| Density | 64 Mb (8 MB) | 64 Mbit (8M x 8 / 4M x 16) |
| Organisation de la mémoire | x8 / x16 | 8M x 8 / 4M x 16 |
| Access Time | 70 ns | 70 ns |
| Tension d'alimentation | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Température de fonctionnement | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Qualification | Automotive AEC-Q100 | — |
| Boîtier | 48-TSOP I | 48-TSOP I (N3) |
| Type de montage | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | Top boot block |
| Part Status | Obsolete | Obsolete |
| Statut RoHS | Compliant (per JLCPCB listing) | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: ICC standby] |
| Read Current | [DATA_NEEDED: active read current] | — |
| Programming Voltage | — | 3 V (single supply) |
| Bus Width | — | x8 / x16 selectable |
| Moisture Sensitivity Level | — | 3 (168 Hours) |
| Packaging | — | Tape & Reel (TR) |
| Temperature Grade | — | Automotive |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Data Retention | — | [DATA_NEEDED: retention] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |