M29W640GT70N3F vs M29W640GB70N3F Comparison
Detailed side-by-side comparison of M29W640GT70N3F by Micron Technology and M29W640GB70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W640GT70N3F | M29W640GB70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Obsolete | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $2.66 |
| Memory Type | NOR Flash - Parallel | NOR Flash, Parallel |
| Density | 64 Mbit (8M x 8 / 4M x 16) | 64 Mb (8 MB) |
| Organization | 8M x 8 / 4M x 16 | x8 / x16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Programming Voltage | 3 V (single supply) | — |
| Bus Width | x8 / x16 selectable | — |
| Block Architecture | Top boot block | Uniform block (GB variant) |
| Package | 48-TSOP I (N3) | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level | 3 (168 Hours) | — |
| Packaging | Tape & Reel (TR) | — |
| Temperature Grade | Automotive | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Standby Current | [DATA_NEEDED: ICC standby] | [DATA_NEEDED: standby current] |
| Part Status | Obsolete | Obsolete |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| RoHS Status | — | Compliant (per JLCPCB listing) |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Read Current | — | [DATA_NEEDED: active read current] |