M29W640GT70N3F vs M29W640GB70N3F 对比
详细并排对比 M29W640GT70N3F 出自 Micron Technology 和 M29W640GB70N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W640GT70N3F | M29W640GB70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $2.66 |
| 存储器类型 | NOR Flash - Parallel | NOR Flash, Parallel |
| Density | 64 Mbit (8M x 8 / 4M x 16) | 64 Mb (8 MB) |
| 存储组织 | 8M x 8 / 4M x 16 | x8 / x16 |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Programming Voltage | 3 V (single supply) | — |
| Bus Width | x8 / x16 selectable | — |
| Block Architecture | Top boot block | Uniform block (GB variant) |
| 封装 | 48-TSOP I (N3) | 48-TSOP I |
| 安装类型 | Surface Mount | Surface Mount |
| Moisture Sensitivity Level | 3 (168 Hours) | — |
| Packaging | Tape & Reel (TR) | — |
| Temperature Grade | Automotive | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Standby Current | [DATA_NEEDED: ICC standby] | [DATA_NEEDED: standby current] |
| Part Status | Obsolete | Obsolete |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| RoHS 状态 | — | Compliant (per JLCPCB listing) |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Read Current | — | [DATA_NEEDED: active read current] |