M29W800FT70N3E vs M29W400FT55N3E Comparison
Detailed side-by-side comparison of M29W800FT70N3E by Micron Technology and M29W400FT55N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W800FT70N3E | M29W400FT55N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $2.80 |
| Memory Type | NOR Flash (Parallel) | Flash - NOR Memory IC |
| Density | 8 Mbit | — |
| Organization | 1M x 8 / 512K x 16 | — |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V (program, erase and read) |
| Programming / Erase Supply | Single supply at VCC (2.7 V to 3.6 V) | — |
| Boot Block Location | Top boot block (FT variant) | — |
| Bus Width | 8-bit or 16-bit (BYTE pin selectable) | — |
| Interface | Parallel, address/data bus | Parallel |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Package | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Block Organization | [DATA_NEEDED: block size/organization] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Memory Size | — | 4 Mbit |
| Sector Size | — | 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) |
| Boot Block Position | — | Top (FT suffix) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 48 |
| Package Code / Shape | — | TSSOP / Rectangular |
| Moisture Sensitivity Level (MSL) | — | 3 (168 Hours) |
| Packaging | — | Tray |
| Peak Reflow Time | — | 30 s max |
| Companion Access-Time Grade | — | 55 ns and 70 ns versions available in family |