MD7IC2755GNR1 vs MD7IC2050NR1 Comparison
Detailed side-by-side comparison of MD7IC2755GNR1 by NXP Semiconductors and MD7IC2050NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MD7IC2755GNR1 | MD7IC2050NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.95 | $21.95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MD7IC2755GNR1 | MD7IC2050NR1 |
| Description | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 2500 MHz to 2700 MHz | — |
| RF Type | WiMAX / Cellular base-station | — |
| Supply Voltage (Vdd) | 28 V (range 26 V to 32 V) | 28 V |
| Supply Current (Idq) | 275 mA | — |
| Gain | 25 dB | — |
| Average Output Power | 10 W (CW, P1dB typical 30 W) | — |
| Drain Voltage Rating | 65 V transient | — |
| Package / Case | TO-270-14 Variant, Gull Wing | TO-270-14 Variant, Flat Leads (TO-270 WB-14) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Mode | Doherty (production-tested symmetrical) | — |
| VSWR Ruggedness | 10:1 stable | — |
| Spurious (all spurs) | Below -60 dBc from 100 mW to 10 W CW | — |
| MSL | [DATA_NEEDED: MSL level] | — |
| Packaging | Tape & Reel | Tape & Reel |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: current RoHS status] |
| Device Type | — | RF LDMOS Integrated Power Amplifier |
| RF Type / Modulation | — | W-CDMA / 3GPP |
| Frequency Range (datasheet typical) | — | 1.88 GHz to 2.1 GHz |
| Frequency Range (broadband match) | — | 1.75 GHz to 2.05 GHz |
| Output Power (Average, W-CDMA) | — | 10 W |
| Supply Voltage Range | — | 26 V to 32 V |
| Quiescent Supply Current | — | 230 mA |
| Power Gain (Gp) | — | 30.5 dB at 2.14 GHz |
| Architecture | — | Two-stage, on-chip matched |
| Maximum Input Power (CW) | — | 28 dBm |