MD7IC2755GNR1 vs MD7IC2050NR1 Comparação
Comparação detalhada lado a lado de MD7IC2755GNR1 por NXP Semiconductors e MD7IC2050NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MD7IC2755GNR1 | MD7IC2050NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $24,95 | $21,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MD7IC2755GNR1 | MD7IC2050NR1 |
| Description | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 2500 MHz to 2700 MHz | — |
| RF Type | WiMAX / Cellular base-station | — |
| Supply Voltage (Vdd) | 28 V (range 26 V to 32 V) | 28 V |
| Supply Current (Idq) | 275 mA | — |
| Gain | 25 dB | — |
| Average Output Power | 10 W (CW, P1dB typical 30 W) | — |
| Drain Voltage Rating | 65 V transient | — |
| Encapsulamento / Caixa | TO-270-14 Variant, Gull Wing | TO-270-14 Variant, Flat Leads (TO-270 WB-14) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Operating Mode | Doherty (production-tested symmetrical) | — |
| VSWR Ruggedness | 10:1 stable | — |
| Spurious (all spurs) | Below -60 dBc from 100 mW to 10 W CW | — |
| MSL | [DATA_NEEDED: MSL level] | — |
| Packaging | Tape & Reel | Tape & Reel |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: current RoHS status] |
| Device Type | — | RF LDMOS Integrated Power Amplifier |
| RF Type / Modulation | — | W-CDMA / 3GPP |
| Frequency Range (datasheet typical) | — | 1.88 GHz to 2.1 GHz |
| Frequency Range (broadband match) | — | 1.75 GHz to 2.05 GHz |
| Output Power (Average, W-CDMA) | — | 10 W |
| Supply Voltage Range | — | 26 V to 32 V |
| Quiescent Supply Current | — | 230 mA |
| Power Gain (Gp) | — | 30.5 dB at 2.14 GHz |
| Architecture | — | Two-stage, on-chip matched |
| Maximum Input Power (CW) | — | 28 dBm |