MD7IC2755GNR1 vs MD7IC2050NR1 Comparaison
Comparaison détaillée côte à côte de MD7IC2755GNR1 par NXP Semiconductors et MD7IC2050NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MD7IC2755GNR1 | MD7IC2050NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $24,95 | $21,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MD7IC2755GNR1 | MD7IC2050NR1 |
| Description | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 2500 MHz to 2700 MHz | — |
| RF Type | WiMAX / Cellular base-station | — |
| Supply Voltage (Vdd) | 28 V (range 26 V to 32 V) | 28 V |
| Supply Current (Idq) | 275 mA | — |
| Gain | 25 dB | — |
| Average Output Power | 10 W (CW, P1dB typical 30 W) | — |
| Drain Voltage Rating | 65 V transient | — |
| Boîtier / Format | TO-270-14 Variant, Gull Wing | TO-270-14 Variant, Flat Leads (TO-270 WB-14) |
| Type de montage | Surface Mount | Surface Mount |
| Operating Mode | Doherty (production-tested symmetrical) | — |
| VSWR Ruggedness | 10:1 stable | — |
| Spurious (all spurs) | Below -60 dBc from 100 mW to 10 W CW | — |
| MSL | [DATA_NEEDED: MSL level] | — |
| Packaging | Tape & Reel | Tape & Reel |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: current RoHS status] |
| Device Type | — | RF LDMOS Integrated Power Amplifier |
| RF Type / Modulation | — | W-CDMA / 3GPP |
| Frequency Range (datasheet typical) | — | 1.88 GHz to 2.1 GHz |
| Frequency Range (broadband match) | — | 1.75 GHz to 2.05 GHz |
| Output Power (Average, W-CDMA) | — | 10 W |
| Supply Voltage Range | — | 26 V to 32 V |
| Quiescent Supply Current | — | 230 mA |
| Power Gain (Gp) | — | 30.5 dB at 2.14 GHz |
| Architecture | — | Two-stage, on-chip matched |
| Maximum Input Power (CW) | — | 28 dBm |