MPX5010GSX vs MPXV5010GP Comparison
Detailed side-by-side comparison of MPX5010GSX by NXP Semiconductors and MPXV5010GP by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
MPXV5010GP - 0-10 kPa Vented Gauge Pressure Sensor, 8-SMD | STMicroelectronics
MPXV5010GP ✓ ActiveSpecification Comparison
| Parameter | MPX5010GSX | MPXV5010GP |
|---|---|---|
| Brand | NXP Semiconductors | STMicroelectronics |
| Category | Pressure Sensors | Pressure Sensors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $10.25 | $9.95 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Output Type | Analog Voltage | Analog Voltage |
| Output Voltage Span | 0.2 V to 4.7 V | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Supply Current | [DATA_NEEDED: supply current typical] | 5 mA typical |
| Accuracy | 1.0 % typical (per datasheet) | [DATA_NEEDED: accuracy %FS] |
| Response Time | [DATA_NEEDED: response time] | — |
| Operating Temperature | 0 C to 85 C | 0 C to +85 C |
| Port Size | Male 0.19 inch (4.93 mm) Tube, Side Port | — |
| Package / Case | 6-SIP Module (Case 867F) | — |
| Termination Style | Through-Hole PCB | — |
| Mounting Type | Through Hole | Surface Mount |
| RoHS Status | Compliant | — |
| Media Compatibility | Dry gases (air, non-corrosive) | — |
| Technology | Piezoresistive MEMS with on-chip ASIC | — |
| Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Operating Pressure Max | — | 10 kPa |
| Output Voltage | — | 0.2 V to 4.7 V |
| Supply Voltage | — | 5 V |
| Sensitivity | — | 450 mV/kPa (approx, 0.2-4.7 V span) |
| Port Style | — | Male - 3.17 mm (0.13 in) Tube, Side Port |
| Package | — | 8-SMD, Gull Wing, Side Port |
| Sensor Technology | — | Piezoresistive (MEMS silicon) |
| Signal Conditioning | — | On-chip, temperature compensated, calibrated |
| Output Ratiometric | — | Yes (output scales with VDD) |